Ultraviolet photoemission measurements are reported for a H covered Si(111) surface for which the H coverage ranged from a fraction to a full monolayer. These measurements reveal striking differences depending whether the Si(111) substrate is kept at room temperature (RT) or 150°C. In particular, the 150°C sample UPS spectral series shows monotonic growth with little line shape change while the RT series shows significant line shape modification with coverage. These results are interpreted as island growth at 150°C and disordered adsorption at RT. Theoretical model calculations are carried out of the electron density of states of a fractional monolayer of H chemisorbed to Si(111) that reproduce the essential features of the RT data and confirm the role of disordering there.
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Condensed Matter Physics
- Surfaces and Interfaces