The effect of diluent gases on the growth of β-SiC films by laser CVD with HMDS

P. P. Zhu; R. Tu; S. Zhang; M. X. Han; Q. F. Xu; Q. Y. Sun; L. M. Zhang; T. Goto; J. S. Yan; S. S. Li

doi:10.1179/1432891715Z.0000000002208

The effect of diluent gases on the growth of β-SiC films by laser CVD with HMDS

P. P. Zhu, R. Tu, S. Zhang, M. X. Han, Q. F. Xu, Q. Y. Sun, L. M. Zhang, T. Goto, J. S. Yan, S. S. Li

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

β-SiC films have been fabricated on (100) Si substrates by laser chemical vapour deposition using hexamethyldisilane ((CH₃)₃-Si-Si-(CH₃)₃) as a source precursor while argon or hydrogen as a diluent gas, respectively. The effects of different diluent gases species on the microstructure and deposition rate have been investigated by varying the flow rate of hexamethyldisilane (f_HMDS). The results showed that pyramid, flower and needle-like morphologies were obtained using argon as diluent gas, whereas only pyramid with little flower structure appeared in the case of hydrogen. The deposition rate (R_dep) was in proportion to the f_HMDS irrespective of diluent gases. R_dep was nearly 50% higher for hydrogen as diluent gas.

Original language	English
Pages (from-to)	403-407
Number of pages	5
Journal	Materials Research Innovations
Volume	19
DOIs	https://doi.org/10.1179/1432891715Z.0000000002208
Publication status	Published - 2015 Dec 1

Keywords

Deposition rate
Diluent gas
Laser chemical vapour deposition
Microstructure
β-SiC

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanical Engineering
Mechanics of Materials

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10.1179/1432891715Z.0000000002208

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@article{ee04358e363e4f74984dd4a4ddd09c1e,

title = "The effect of diluent gases on the growth of β-SiC films by laser CVD with HMDS",

abstract = "β-SiC films have been fabricated on (100) Si substrates by laser chemical vapour deposition using hexamethyldisilane ((CH3)3-Si-Si-(CH3)3) as a source precursor while argon or hydrogen as a diluent gas, respectively. The effects of different diluent gases species on the microstructure and deposition rate have been investigated by varying the flow rate of hexamethyldisilane (fHMDS). The results showed that pyramid, flower and needle-like morphologies were obtained using argon as diluent gas, whereas only pyramid with little flower structure appeared in the case of hydrogen. The deposition rate (Rdep) was in proportion to the fHMDS irrespective of diluent gases. Rdep was nearly 50% higher for hydrogen as diluent gas.",

keywords = "Deposition rate, Diluent gas, Laser chemical vapour deposition, Microstructure, β-SiC",

author = "Zhu, {P. P.} and R. Tu and S. Zhang and Han, {M. X.} and Xu, {Q. F.} and Sun, {Q. Y.} and Zhang, {L. M.} and T. Goto and Yan, {J. S.} and Li, {S. S.}",

year = "2015",

month = dec,

day = "1",

doi = "10.1179/1432891715Z.0000000002208",

language = "English",

volume = "19",

pages = "403--407",

journal = "Materials Research Innovations",

issn = "1432-8917",

publisher = "Maney Publishing",

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TY - JOUR

T1 - The effect of diluent gases on the growth of β-SiC films by laser CVD with HMDS

AU - Zhu, P. P.

AU - Tu, R.

AU - Zhang, S.

AU - Han, M. X.

AU - Xu, Q. F.

AU - Sun, Q. Y.

AU - Zhang, L. M.

AU - Goto, T.

AU - Yan, J. S.

AU - Li, S. S.

PY - 2015/12/1

Y1 - 2015/12/1

N2 - β-SiC films have been fabricated on (100) Si substrates by laser chemical vapour deposition using hexamethyldisilane ((CH3)3-Si-Si-(CH3)3) as a source precursor while argon or hydrogen as a diluent gas, respectively. The effects of different diluent gases species on the microstructure and deposition rate have been investigated by varying the flow rate of hexamethyldisilane (fHMDS). The results showed that pyramid, flower and needle-like morphologies were obtained using argon as diluent gas, whereas only pyramid with little flower structure appeared in the case of hydrogen. The deposition rate (Rdep) was in proportion to the fHMDS irrespective of diluent gases. Rdep was nearly 50% higher for hydrogen as diluent gas.

AB - β-SiC films have been fabricated on (100) Si substrates by laser chemical vapour deposition using hexamethyldisilane ((CH3)3-Si-Si-(CH3)3) as a source precursor while argon or hydrogen as a diluent gas, respectively. The effects of different diluent gases species on the microstructure and deposition rate have been investigated by varying the flow rate of hexamethyldisilane (fHMDS). The results showed that pyramid, flower and needle-like morphologies were obtained using argon as diluent gas, whereas only pyramid with little flower structure appeared in the case of hydrogen. The deposition rate (Rdep) was in proportion to the fHMDS irrespective of diluent gases. Rdep was nearly 50% higher for hydrogen as diluent gas.

KW - Deposition rate

KW - Diluent gas

KW - Laser chemical vapour deposition

KW - Microstructure

KW - β-SiC

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U2 - 10.1179/1432891715Z.0000000002208

DO - 10.1179/1432891715Z.0000000002208

M3 - Article

AN - SCOPUS:84953749371

VL - 19

SP - 403

EP - 407

JO - Materials Research Innovations

JF - Materials Research Innovations

SN - 1432-8917

ER -

The effect of diluent gases on the growth of β-SiC films by laser CVD with HMDS

Abstract

Keywords

ASJC Scopus subject areas

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