The effect of different nanoscale material doping on the critical current properties of in situ processed MgB2 tapes

Xianping Zhang, Yanwei Ma, Zhaoshun Gao, Zhengguang Yu, G. Nishijima, K. Watanabe

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Fe-sheathed MgB2 tapes were prepared by the in situ powder-in-tube technique using nanometre Si/N/C, SiC whiskers and SiC as doping materials, respectively. The doping effect on phase composition, microstructure and critical current properties was investigated. Heat treatment was performed at 650 °C for 1 h under an argon gas atmosphere. All the doped tapes were found to have significantly enhanced critical current density JC at 4.2 K in magnetic fields up to 14 T compared with their undoped counterparts. Moreover, the tapes doped with nano-SiC had the best pinning performance, while the SiC whiskers and Si/N/C powders showed a similar improved field dependence of JC compared to undoped samples. At 4.2 K and 10 T, JC for the nano-SiC doped samples increased by a factor of 32. Even for Si/N/C doped tapes, a 16-fold improvement in the magnetic field JC was observed. It is inferred that the different chemical properties of the Si and C elements in SiC, SiC whiskers and Si/N/C led to the JC-B difference.

Original languageEnglish
Pages (from-to)479-483
Number of pages5
JournalSuperconductor Science and Technology
Volume19
Issue number6
DOIs
Publication statusPublished - 2006 Jun 1

ASJC Scopus subject areas

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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