The development of scanning microwave microscope for high-throughput characterization of dielectric and conducting materials at low temperatures

Sohei Okazaki, Noriaki Okazaki, Hidetaka Sugaya, Xiaoru Zhao, Ken Hasegawa, Parhat Ahmet, Toyohiro Chikyow, Jun Nishimura, Tomoteru Fukumura, Masashi Kawasaki, Makoto Murakami, Yuji Mastumoto, Hideomi Koinuma, Tetsuya Hasegawa

Research output: Contribution to journalConference article

Abstract

We developed a scanning microwave microscope (SμM) designed for characterizing local electric properties at low temperatures. A high-Q λ/4coaxial cavity was used as a sensor probe, which can detect the change of quality factor due to the tip-sample interaction with enough accuracy. From the measurements of combinatorial samples, it was demonstrated that this SμM system has enough performance for high-throughput characterization of sample conductance under variable temperature conditions.

Original languageEnglish
Pages (from-to)249-254
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume804
DOIs
Publication statusPublished - 2003 Jan 1
EventCombinatorial and Artificial Intelligence Methods in Materials Science II - Boston, MA., United States
Duration: 2003 Dec 12003 Dec 4

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Okazaki, S., Okazaki, N., Sugaya, H., Zhao, X., Hasegawa, K., Ahmet, P., Chikyow, T., Nishimura, J., Fukumura, T., Kawasaki, M., Murakami, M., Mastumoto, Y., Koinuma, H., & Hasegawa, T. (2003). The development of scanning microwave microscope for high-throughput characterization of dielectric and conducting materials at low temperatures. Materials Research Society Symposium - Proceedings, 804, 249-254. https://doi.org/10.1557/proc-804-jj9.21