The design concept for high-temperature photo-electronic devices using SrTiO3

F. Horikiri, K. Sato, K. Yashiro, T. Kawada, J. Mizusaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Quantum electronic discussion was made on metal/SrTiO3 hetero-structure to obtain the design concept for high-temperature photo-electronic devices using SrTiO3. The current density ratios were calculated between tunneling and thermionic emission component across the hetero-interface, which indicates how much dopant concentration is required for ohmic or Schottky contact. WKB approximation and Gamow transmission coefficient were used in calculation of the tunneling coefficient. The calculated results show good agreement with experimental results. The possibility of high-temperature photo-electronic devices using SrTiO3 was shown both in theoretical and experimental approach.

Original languageEnglish
Title of host publicationECS Transactions - Solid State Ionic Devices 6 - Nanoionics - 214th ECS Meeting
Pages459-469
Number of pages11
Edition51
DOIs
Publication statusPublished - 2008
EventSolid State Ionic Devices 6 - Nanoionics - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 122008 Oct 17

Publication series

NameECS Transactions
Number51
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSolid State Ionic Devices 6 - Nanoionics - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1208/10/17

ASJC Scopus subject areas

  • Engineering(all)

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