The contact properties and TFT structures of a-IGZO TFTs combined with Cu-Mn alloy electrodes

Pil Sang Yun, Mayumi Naito, Ryo Kumagai, Yuji Sutou, Junichi Koike

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Electrical properties and microstructures were investigated between a-IGZO and metal electrodes. We should use Cu-Mn or Ti electrodes as the contact promoter and diffusion barrier. Ohmic behaviors were obtained with Cu-Mn and Ti after annealing at 250°C. TFT showed high performance with theses. This is due to reduced a-IGZO and oxygen deficient region.

Original languageEnglish
Title of host publication49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011
Pages1177-1180
Number of pages4
Publication statusPublished - 2011 Dec 1
Event49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 - Los Angeles, CA, United States
Duration: 2011 May 152011 May 20

Publication series

Name49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011
Volume3

Other

Other49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011
CountryUnited States
CityLos Angeles, CA
Period11/5/1511/5/20

ASJC Scopus subject areas

  • Hardware and Architecture

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