The cleaning method which is able to keep the smoothness of SI (100)

Xiang Li, Xun Gu, Akinobu Teramoto, Rihito Kuroda, Rui Hasebe, Tomoyuki Suwa, Ningmei Yu, Shigetoshi Sugawa, Takashi Itoh, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Si (100) with atomic order flat surface realized by 1200°C annealing in argon ambient is used for the experiment. During wet cleaning process, wet chemical cleaning solution, process time and temperature essentially affect the roughness of silicon surface. Then, the affection of every step of the traditional cleaning (RCA) and the new cleaning technology - 5-step room temperature cleaning to the roughness of Si (100) wafer is evaluated. As a result, 5-step room temperature cleaning which does not employ alkali solution can keep the atomic order flat surface on Si (100).

Original languageEnglish
Title of host publicationSemiconductor Technology, ISTC 2008 - Proceedings of the 7th International Conference on Semiconductor Technology
Pages469-474
Number of pages6
VolumePV 2008-1
Publication statusPublished - 2008 Sep 29
Event7th International Conference on Semiconductor Technology, ISTC 2008 - Shanghai, China
Duration: 2008 Mar 152008 Mar 17

Other

Other7th International Conference on Semiconductor Technology, ISTC 2008
CountryChina
CityShanghai
Period08/3/1508/3/17

Keywords

  • Cleaning
  • Roughness
  • Si (100)

ASJC Scopus subject areas

  • Electrochemistry

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