The characterization of synthetic and natural single crystal diamonds by X-ray diffraction

H. Maeta, N. Matsumoto, K. Haruna, T. Saotome, F. Ono, H. Sugai, H. Ohtsuka, K. Ohashi

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Abstract

Natural and synthetic single crystal diamonds (types Ia, Ib, IIa and IIb) have been characterized by measurements of the X-ray integrated scattering intensity, lattice parameter and diffuse scattering. We found a drastic increase of X-ray integrated scattering intensity for natural and B-doped diamond crystals. Synthetic type IIa diamond was also measured for comparison. Measurements of the lattice parameters have been made at room temperature by using the X-ray bond method. We found that the lattice parameter is smallest for natural diamond and largest for the B-doped diamond. Diffuse scattering experiments were performed using a four circle diffractometer at room temperature. We measured the diffuse scattering for (4 0 0) Bragg reflection for the four types of crystals. The scattering intensity of the natural crystals diffuses asymmetrically to form a streak along the [1 0 0] direction parallel to the reciprocal lattice vector. These results suggest the existence of the nitrogen atom platelets on (1 0 0) plane in the natural diamond. We also found the diffuse streaks along the [100] direction for (4 0 0) Bragg reflection for the B-doped crystal, suggesting that boron atoms are likely to form precipitates on the (1 0 0) plane.

Original languageEnglish
Pages (from-to)283-287
Number of pages5
JournalPhysica B: Condensed Matter
Volume376-377
Issue number1
DOIs
Publication statusPublished - 2006 Apr 1
EventProceedings of the 23rd International Conference on Defects in Semiconductors -
Duration: 2005 Jul 242005 Jul 29

Keywords

  • Lattice parameter
  • Natural diamond
  • Synthetic diamond
  • X-ray diffuse scattering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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