TY - GEN
T1 - The characterization of electronic state from surface to several nanometer region on MgO:Si thin film
AU - Nishitani, Mikihiko
AU - Fukada, Mutsumu
AU - Morita, Yukihiro
AU - Terauchi, Masaharu
AU - Kurashiki, Tessei
AU - Tsuchiura, Hiroki
AU - Yamauchi, Yasushi
PY - 2012
Y1 - 2012
N2 - We report the properties of MgO:Si film as a protective cathode material on the electrical discharge, and the electronic state of the outer-most surface on MgO:Si film characterized by helium Meta-stable De-excitation Spectroscopy (MDS) and that of several nanometer region from the surface evaluated by X-ray Photoelectron Spectroscopy (XPS). Both of the spectra are discussed focusing on the dependence upon the amount of Si in the MgO film for understanding discharge phenomena. The analyses of the experimental data imply that the discharge properties are not improved due to surface degradation with the increase of Si in MgO films. However, an in-situ discharge experiment, in which MgO:Si films are not exposed for the atmosphere after its deposition, shows that the introduction of Si up to about 1 atomic% has the potential to enhance the secondary electron emission coefficient.
AB - We report the properties of MgO:Si film as a protective cathode material on the electrical discharge, and the electronic state of the outer-most surface on MgO:Si film characterized by helium Meta-stable De-excitation Spectroscopy (MDS) and that of several nanometer region from the surface evaluated by X-ray Photoelectron Spectroscopy (XPS). Both of the spectra are discussed focusing on the dependence upon the amount of Si in the MgO film for understanding discharge phenomena. The analyses of the experimental data imply that the discharge properties are not improved due to surface degradation with the increase of Si in MgO films. However, an in-situ discharge experiment, in which MgO:Si films are not exposed for the atmosphere after its deposition, shows that the introduction of Si up to about 1 atomic% has the potential to enhance the secondary electron emission coefficient.
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U2 - 10.1557/opl.2012.29
DO - 10.1557/opl.2012.29
M3 - Conference contribution
AN - SCOPUS:84865013262
SN - 9781605113838
T3 - Materials Research Society Symposium Proceedings
SP - 101
EP - 106
BT - Functional Metal Oxide Nanostructures
T2 - 2011 MRS Fall Meeting
Y2 - 28 November 2011 through 2 December 2012
ER -