The characterization of electronic state from surface to several nanometer region on MgO:Si thin film

Mikihiko Nishitani, Mutsumu Fukada, Yukihiro Morita, Masaharu Terauchi, Tessei Kurashiki, Hiroki Tsuchiura, Yasushi Yamauchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We report the properties of MgO:Si film as a protective cathode material on the electrical discharge, and the electronic state of the outer-most surface on MgO:Si film characterized by helium Meta-stable De-excitation Spectroscopy (MDS) and that of several nanometer region from the surface evaluated by X-ray Photoelectron Spectroscopy (XPS). Both of the spectra are discussed focusing on the dependence upon the amount of Si in the MgO film for understanding discharge phenomena. The analyses of the experimental data imply that the discharge properties are not improved due to surface degradation with the increase of Si in MgO films. However, an in-situ discharge experiment, in which MgO:Si films are not exposed for the atmosphere after its deposition, shows that the introduction of Si up to about 1 atomic% has the potential to enhance the secondary electron emission coefficient.

Original languageEnglish
Title of host publicationFunctional Metal Oxide Nanostructures
Number of pages6
Publication statusPublished - 2012
Event2011 MRS Fall Meeting - Boston, MA, United States
Duration: 2011 Nov 282012 Dec 2

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2011 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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