The barrier formation mechanism on SrTiO3 for high-temperature photo-electronic devices

F. Horikiri, T. Ichikawa, K. Sato, K. Yashiro, T. Kawada, J. Mizusaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Investigation was made on the interface characteristics between various metal electrodes and SrTiO3 single crystals at high-temperatures. The interfaces showed the non-linear current-voltage characteristics, which was caused by the Schottky barrier formed at the interface. The estimated Schottky barrier heights were approximately 1.5 eV, which were almost independent of the work function of electrode metal. These results indicated that the barrier formation obeys the diffusion mechanism for the Bardeen limit at high-temperature.

Original languageEnglish
Title of host publicationECS Transactions - Solid State Ionic Devices 6 - Nanoionics - 214th ECS Meeting
Pages451-458
Number of pages8
Edition51
DOIs
Publication statusPublished - 2008 Dec 1
EventSolid State Ionic Devices 6 - Nanoionics - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 122008 Oct 17

Publication series

NameECS Transactions
Number51
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSolid State Ionic Devices 6 - Nanoionics - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1208/10/17

ASJC Scopus subject areas

  • Engineering(all)

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