The antisite LuAl defect-related trap in Lu3Al 5O12:Ce single crystal

M. Nikl, E. Mihokova, J. Pejchal, A. Vedda, Yu Zorenko, K. Nejezchleb

Research output: Contribution to journalArticlepeer-review

201 Citations (Scopus)


Absorption, radioluminescence and thermoluminescence spectra were measured for a set of Lu3Al5O12:Ce samples consisting of a bulk single crystal and Liquid Phase Epitaxy-grown films prepared from the same raw materials. The triple peak structure within 120-200 K distinguished in thermoluminescence glow curves of the bulk crystals was ascribed to an electron trap arising due to the LuAl antisite defect. The depth of the trap associated with the dominant peak at 142 K was evaluated using the initial rise method.

Original languageEnglish
Pages (from-to)R119-R121
JournalPhysica Status Solidi (B) Basic Research
Issue number14
Publication statusPublished - 2005 Nov

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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