The antisite Lu_Al defect-related trap in Lu₃Al ₅O₁₂:Ce single crystal

Absorption, radioluminescence and thermoluminescence spectra were measured for a set of Lu₃Al₅O₁₂:Ce samples consisting of a bulk single crystal and Liquid Phase Epitaxy-grown films prepared from the same raw materials. The triple peak structure within 120-200 K distinguished in thermoluminescence glow curves of the bulk crystals was ascribed to an electron trap arising due to the Lu_Al antisite defect. The depth of the trap associated with the dominant peak at 142 K was evaluated using the initial rise method.