The antisite LuAl defect-related trap in Lu3Al 5O12:Ce single crystal

M. Nikl, E. Mihokova, J. Pejchal, A. Vedda, Yu Zorenko, K. Nejezchleb

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Abstract

Absorption, radioluminescence and thermoluminescence spectra were measured for a set of Lu3Al5O12:Ce samples consisting of a bulk single crystal and Liquid Phase Epitaxy-grown films prepared from the same raw materials. The triple peak structure within 120-200 K distinguished in thermoluminescence glow curves of the bulk crystals was ascribed to an electron trap arising due to the LuAl antisite defect. The depth of the trap associated with the dominant peak at 142 K was evaluated using the initial rise method.

Original languageEnglish
Pages (from-to)R119-R121
JournalPhysica Status Solidi (B) Basic Research
Volume242
Issue number14
DOIs
Publication statusPublished - 2005 Nov 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Nikl, M., Mihokova, E., Pejchal, J., Vedda, A., Zorenko, Y., & Nejezchleb, K. (2005). The antisite LuAl defect-related trap in Lu3Al 5O12:Ce single crystal. Physica Status Solidi (B) Basic Research, 242(14), R119-R121. https://doi.org/10.1002/pssb.200541225