The Annealing Behavior of Si-F Bonding Structure of Amorphous Si-F Films

Keiichi Yamamoto, Mikio Tsuji, Katsuyoshi Washio, Hajime Kasahara, Kenji Abe

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)

Abstract

The infrared transmittance and reflectance spectra of amorphous fluorinated silicon films (a-Si: F) have been measured as a function of a ratio of SiF4/(SiF4+ Ar) partial pressure and annealing temperature. The absorption bands were assigned: 1,015 cm-1 (SiF4 stretching), 965 cm-1 (Si-F3 stretching), 920 cm-1 (Si-F2 stretching), 870 cm-1 ((Si-F2)2 stretching), 825 cm-1 (Si-F stretching), 600 cm-1 (Si-C stretching or Si 2LA mode), 515 cm-1 (Si TO mode), 380 cm-1 (SiF4 bending), and 300 cm-1 (Si LA mode). SiF4 molecules incorporated into a-Si: F films are observed in samples prepared with high SiF4 partial pressures, but in samples prepared lower SiF4 partial pressures dangling bonds seem to be saturated by fluorine atoms. The transition from Si-F, Si-F2, and Si-F3 groups to SiF4 molecules occurs above annealing temperatures (600 �C). The total fluorine content is constant until crystallization, and a-Si: F films are found to be more stable than a-Si: H films.

Original languageEnglish
Pages (from-to)925-933
Number of pages9
Journaljournal of the physical society of japan
Volume52
Issue number3
DOIs
Publication statusPublished - 1983
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'The Annealing Behavior of Si-F Bonding Structure of Amorphous Si-F Films'. Together they form a unique fingerprint.

Cite this