The 2D Materials Used for Nanodevice Applications: Utilizing Aggressively Scaled Transistors

Kazuhiko Endo; Yasumitsu Miyata; Toshifumi Irisawa

doi:10.1109/MNANO.2019.2941030

The 2D Materials Used for Nanodevice Applications: Utilizing Aggressively Scaled Transistors

Kazuhiko Endo, Yasumitsu Miyata, Toshifumi Irisawa

Research output: Contribution to journal › Article › peer-review

Abstract

Current nanodevices face many difficulties, one of which is the well-known issue of short-channel effects (SCEs). SCEs cause significant degradation in device characteristics. To overcome this issue, 2D materials have been studied since 2000. This article reveals the motivation for research on 2D materials for device application.

Original language	English
Article number	8863637
Pages (from-to)	39-42
Number of pages	4
Journal	IEEE Nanotechnology Magazine
Volume	13
Issue number	6
DOIs	https://doi.org/10.1109/MNANO.2019.2941030
Publication status	Published - 2019 Dec
Externally published	Yes

ASJC Scopus subject areas

Mechanical Engineering
Electrical and Electronic Engineering

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abstract = "Current nanodevices face many difficulties, one of which is the well-known issue of short-channel effects (SCEs). SCEs cause significant degradation in device characteristics. To overcome this issue, 2D materials have been studied since 2000. This article reveals the motivation for research on 2D materials for device application.",

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