The 2D Materials Used for Nanodevice Applications: Utilizing Aggressively Scaled Transistors

Kazuhiko Endo; Yasumitsu Miyata; Toshifumi Irisawa

doi:10.1109/MNANO.2019.2941030

The 2D Materials Used for Nanodevice Applications: Utilizing Aggressively Scaled Transistors

Kazuhiko Endo, Yasumitsu Miyata, Toshifumi Irisawa

Research output: Contribution to journal › Article

Abstract

Current nanodevices face many difficulties, one of which is the well-known issue of short-channel effects (SCEs). SCEs cause significant degradation in device characteristics. To overcome this issue, 2D materials have been studied since 2000. This article reveals the motivation for research on 2D materials for device application.

Original language	English
Article number	8863637
Pages (from-to)	39-42
Number of pages	4
Journal	IEEE Nanotechnology Magazine
Volume	13
Issue number	6
DOIs	https://doi.org/10.1109/MNANO.2019.2941030
Publication status	Published - 2019 Dec
Externally published	Yes

ASJC Scopus subject areas

Mechanical Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/MNANO.2019.2941030

Fingerprint Dive into the research topics of 'The 2D Materials Used for Nanodevice Applications: Utilizing Aggressively Scaled Transistors'. Together they form a unique fingerprint.

Cite this

Endo, K., Miyata, Y., & Irisawa, T. (2019). The 2D Materials Used for Nanodevice Applications: Utilizing Aggressively Scaled Transistors. IEEE Nanotechnology Magazine, 13(6), 39-42. [8863637]. https://doi.org/10.1109/MNANO.2019.2941030

@article{9d0bf4232f25421da7bf69bfe4c9f8fb,

title = "The 2D Materials Used for Nanodevice Applications: Utilizing Aggressively Scaled Transistors",

abstract = "Current nanodevices face many difficulties, one of which is the well-known issue of short-channel effects (SCEs). SCEs cause significant degradation in device characteristics. To overcome this issue, 2D materials have been studied since 2000. This article reveals the motivation for research on 2D materials for device application.",

author = "Kazuhiko Endo and Yasumitsu Miyata and Toshifumi Irisawa",

year = "2019",

month = dec,

doi = "10.1109/MNANO.2019.2941030",

language = "English",

volume = "13",

pages = "39--42",

journal = "IEEE Nanotechnology Magazine",

issn = "1932-4510",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - The 2D Materials Used for Nanodevice Applications

T2 - Utilizing Aggressively Scaled Transistors

AU - Endo, Kazuhiko

AU - Miyata, Yasumitsu

AU - Irisawa, Toshifumi

PY - 2019/12

Y1 - 2019/12

N2 - Current nanodevices face many difficulties, one of which is the well-known issue of short-channel effects (SCEs). SCEs cause significant degradation in device characteristics. To overcome this issue, 2D materials have been studied since 2000. This article reveals the motivation for research on 2D materials for device application.

AB - Current nanodevices face many difficulties, one of which is the well-known issue of short-channel effects (SCEs). SCEs cause significant degradation in device characteristics. To overcome this issue, 2D materials have been studied since 2000. This article reveals the motivation for research on 2D materials for device application.

UR - http://www.scopus.com/inward/record.url?scp=85073163909&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85073163909&partnerID=8YFLogxK

U2 - 10.1109/MNANO.2019.2941030

DO - 10.1109/MNANO.2019.2941030

M3 - Article

AN - SCOPUS:85073163909

VL - 13

SP - 39

EP - 42

JO - IEEE Nanotechnology Magazine

JF - IEEE Nanotechnology Magazine

SN - 1932-4510

IS - 6

M1 - 8863637

ER -