TY - JOUR
T1 - The 2D Materials Used for Nanodevice Applications
T2 - Utilizing Aggressively Scaled Transistors
AU - Endo, Kazuhiko
AU - Miyata, Yasumitsu
AU - Irisawa, Toshifumi
N1 - Publisher Copyright:
© 2007-2011 IEEE.
PY - 2019/12
Y1 - 2019/12
N2 - Current nanodevices face many difficulties, one of which is the well-known issue of short-channel effects (SCEs). SCEs cause significant degradation in device characteristics. To overcome this issue, 2D materials have been studied since 2000. This article reveals the motivation for research on 2D materials for device application.
AB - Current nanodevices face many difficulties, one of which is the well-known issue of short-channel effects (SCEs). SCEs cause significant degradation in device characteristics. To overcome this issue, 2D materials have been studied since 2000. This article reveals the motivation for research on 2D materials for device application.
UR - http://www.scopus.com/inward/record.url?scp=85073163909&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85073163909&partnerID=8YFLogxK
U2 - 10.1109/MNANO.2019.2941030
DO - 10.1109/MNANO.2019.2941030
M3 - Article
AN - SCOPUS:85073163909
SN - 1932-4510
VL - 13
SP - 39
EP - 42
JO - IEEE Nanotechnology Magazine
JF - IEEE Nanotechnology Magazine
IS - 6
M1 - 8863637
ER -