TETRAGONAL HEUSLER-LIKE Mn-Ga ALLOYS BASED PERPENDICULAR MAGNETIC TUNNEL JUNCTIONS

Qinli Ma, Atsushi Sugihara, Kazuya Suzuki, Xianmin Zhang, Terunobu Miyazaki, Shigemi Mizukami

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

Films of the Mn-based tetragonal Heusler-like alloys, such as Mn-Ga, exhibit a large perpendicular magnetic anisotropy (PMA), small damping constant, small saturation magnetization and large spin polarizations. These properties are attractive for the application to the next generation high density spin-transfer-torque (STT) magnetic random access memory (STT-MRAM). We reviewed the structure, magnetic properties and Gilbert damping of the alloy films with large PMA, and the current status of research on tunnel magnetoresistance (TMR) in perpendicular magnetic tunnel junctions (p-MTJs) based on Mn-based tetragonal Heusler-like alloy electrode, and also discuss the issues for the application of those to STT-MRAM.

Original languageEnglish
Article number1440024
JournalSPIN
Volume4
Issue number4
DOIs
Publication statusPublished - 2014 Dec 1

Keywords

  • Gilbert damping
  • STT-MRAM
  • Tetragonal Heusler-like alloys
  • films
  • magnetic tunnel junctions
  • perpendicular magnetic anisotropy
  • tunnel magnetoresistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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