Test structure and simplified distribution model for identification of base resistance components in self-aligned polysilicon base electrode bipolar transistors

Masamichi Tanabe, Hiromi Shimamoto, Takahiro Onai, Katsuyoshi Washio

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

A test structure and a simplified distribution base resistance model (SDM) are proposed to identify each component of the base resistance and to obtain the dominant. This model separates the parasitic base resistance into one straight path and two surrounding paths. It is clarified that the link base resistance is dominant in a short emitter and the surrounding polysilicon base electrode resistance is dominant in a long emitter.

Original languageEnglish
Pages121-125
Number of pages5
Publication statusPublished - 1995 Jan 1
Externally publishedYes
EventProceedings of the 1995 IEEE International Conference on Microelectronic Test Structures (ICMTS 1995) - Nara, Jpn
Duration: 1995 Mar 221995 Mar 25

Other

OtherProceedings of the 1995 IEEE International Conference on Microelectronic Test Structures (ICMTS 1995)
CityNara, Jpn
Period95/3/2295/3/25

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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