Abstract
A test structure and a simplified distribution base resistance model (SDM) are proposed to identify each component of the base resistance and to obtain the dominant. This model separates the parasitic base resistance into one straight path and two surrounding paths. It is clarified that the link base resistance is dominant in a short emitter and the surrounding polysilicon base electrode resistance is dominant in a long emitter.
Original language | English |
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Pages | 121-125 |
Number of pages | 5 |
Publication status | Published - 1995 Jan 1 |
Externally published | Yes |
Event | Proceedings of the 1995 IEEE International Conference on Microelectronic Test Structures (ICMTS 1995) - Nara, Jpn Duration: 1995 Mar 22 → 1995 Mar 25 |
Other
Other | Proceedings of the 1995 IEEE International Conference on Microelectronic Test Structures (ICMTS 1995) |
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City | Nara, Jpn |
Period | 95/3/22 → 95/3/25 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering