Test structure and simplified distribution model for identification of base resistance components in self-aligned polysilicon base electrode bipolar transistors

Masamichi Tanabe; Hiromi Shimamoto; Takahiro Onai; Katsuyoshi Washio

Test structure and simplified distribution model for identification of base resistance components in self-aligned polysilicon base electrode bipolar transistors

Masamichi Tanabe, Hiromi Shimamoto, Takahiro Onai, Katsuyoshi Washio

Research output: Contribution to conference › Paper › peer-review

Abstract

A test structure and a simplified distribution base resistance model (SDM) are proposed to identify each component of the base resistance and to obtain the dominant. This model separates the parasitic base resistance into one straight path and two surrounding paths. It is clarified that the link base resistance is dominant in a short emitter and the surrounding polysilicon base electrode resistance is dominant in a long emitter.

Original language	English
Pages	121-125
Number of pages	5
Publication status	Published - 1995 Jan 1
Externally published	Yes
Event	Proceedings of the 1995 IEEE International Conference on Microelectronic Test Structures (ICMTS 1995) - Nara, Jpn Duration: 1995 Mar 22 → 1995 Mar 25

Other

Other	Proceedings of the 1995 IEEE International Conference on Microelectronic Test Structures (ICMTS 1995)
City	Nara, Jpn
Period	95/3/22 → 95/3/25

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Test structure and simplified distribution model for identification of base resistance components in self-aligned polysilicon base electrode bipolar transistors. / Tanabe, Masamichi; Shimamoto, Hiromi; Onai, Takahiro; Washio, Katsuyoshi.

1995. 121-125 Paper presented at Proceedings of the 1995 IEEE International Conference on Microelectronic Test Structures (ICMTS 1995), Nara, Jpn.

Research output: Contribution to conference › Paper › peer-review

Tanabe, M, Shimamoto, H, Onai, T & Washio, K 1995, 'Test structure and simplified distribution model for identification of base resistance components in self-aligned polysilicon base electrode bipolar transistors', Paper presented at Proceedings of the 1995 IEEE International Conference on Microelectronic Test Structures (ICMTS 1995), Nara, Jpn, 95/3/22 - 95/3/25 pp. 121-125.

Tanabe, Masamichi ; Shimamoto, Hiromi ; Onai, Takahiro ; Washio, Katsuyoshi. / Test structure and simplified distribution model for identification of base resistance components in self-aligned polysilicon base electrode bipolar transistors. Paper presented at Proceedings of the 1995 IEEE International Conference on Microelectronic Test Structures (ICMTS 1995), Nara, Jpn.5 p.

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abstract = "A test structure and a simplified distribution base resistance model (SDM) are proposed to identify each component of the base resistance and to obtain the dominant. This model separates the parasitic base resistance into one straight path and two surrounding paths. It is clarified that the link base resistance is dominant in a short emitter and the surrounding polysilicon base electrode resistance is dominant in a long emitter.",

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AU - Tanabe, Masamichi

AU - Shimamoto, Hiromi

AU - Onai, Takahiro

AU - Washio, Katsuyoshi

PY - 1995/1/1

Y1 - 1995/1/1

N2 - A test structure and a simplified distribution base resistance model (SDM) are proposed to identify each component of the base resistance and to obtain the dominant. This model separates the parasitic base resistance into one straight path and two surrounding paths. It is clarified that the link base resistance is dominant in a short emitter and the surrounding polysilicon base electrode resistance is dominant in a long emitter.

AB - A test structure and a simplified distribution base resistance model (SDM) are proposed to identify each component of the base resistance and to obtain the dominant. This model separates the parasitic base resistance into one straight path and two surrounding paths. It is clarified that the link base resistance is dominant in a short emitter and the surrounding polysilicon base electrode resistance is dominant in a long emitter.

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T2 - Proceedings of the 1995 IEEE International Conference on Microelectronic Test Structures (ICMTS 1995)

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ER -

Test structure and simplified distribution model for identification of base resistance components in self-aligned polysilicon base electrode bipolar transistors

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ASJC Scopus subject areas

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