Test structure and experimental analysis of emitterbase reverse voltage stress degradation in selfaligned bipolar transistors

Hiromi Shimamoto, Masamichi Tanabe, Takahiro Onai, Katsuyoshi Washio, Tohru Nakamura

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The degradation of I-V characteristics under constant emitter-base reverse voltage stress in advanced selfaligned bipolar transistors was analyzed. Experimental analyses have been taken the stress field effect into account when predicting hot-carrier degradation. These analyses showed that base current starts to increase when the reverse voltage stress is about 3 V. The dependence of the base current change on reverse voltages of more than 3 V was also investigated experimentally, and equations expressing hot-carrier degradation in terms of the exponential dependence of excess base current on both reverse stress voltage and stress-enhancing voltage related to emitter-base breakdown voltage were derived.

Original languageEnglish
Pages (from-to)211-217
Number of pages7
JournalIEICE Transactions on Electronics
VolumeE79-C
Issue number2
Publication statusPublished - 1996 Jan 1
Externally publishedYes

Keywords

  • Emitterbase reverse voltage stress
  • Hot-carrier
  • Self-aligned bipolar transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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