Abstract
The degradation of I-V characteristics under constant emitter-base reverse voltage stress in advanced selfaligned bipolar transistors was analyzed. Experimental analyses have been taken the stress field effect into account when predicting hot-carrier degradation. These analyses showed that base current starts to increase when the reverse voltage stress is about 3 V. The dependence of the base current change on reverse voltages of more than 3 V was also investigated experimentally, and equations expressing hot-carrier degradation in terms of the exponential dependence of excess base current on both reverse stress voltage and stress-enhancing voltage related to emitter-base breakdown voltage were derived.
Original language | English |
---|---|
Pages (from-to) | 211-217 |
Number of pages | 7 |
Journal | IEICE Transactions on Electronics |
Volume | E79-C |
Issue number | 2 |
Publication status | Published - 1996 Jan 1 |
Externally published | Yes |
Keywords
- Emitterbase reverse voltage stress
- Hot-carrier
- Self-aligned bipolar transistor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering