TY - GEN
T1 - Test structure and experimental analysis of bipolar hot-carrier degradation including stress field effect
AU - Shimamoto, Hiromi
AU - Tanabe, Masamichi
AU - Onai, Takahiro
AU - Washio, Katsuyoshi
AU - Nakamura, Tohru
PY - 1992
Y1 - 1992
N2 - The authors describe test transistors with different emitter-base breakdown voltages and an experimental analysis to predict hot-carrier degradation, including the stress field effect, in advanced high-speed self-aligned bipolar transistors. Test transistors were fabricated with different links of extrinsic to intrinsic bases, that is, transistors had different reverse I-V characteristics of the emitter-base junction. Experimental evidence showed that the dependence of the excess base current on stress can be expressed using emitter perimeter, reverse stress voltage, stress-enhancing voltage, and stress charge.
AB - The authors describe test transistors with different emitter-base breakdown voltages and an experimental analysis to predict hot-carrier degradation, including the stress field effect, in advanced high-speed self-aligned bipolar transistors. Test transistors were fabricated with different links of extrinsic to intrinsic bases, that is, transistors had different reverse I-V characteristics of the emitter-base junction. Experimental evidence showed that the dependence of the excess base current on stress can be expressed using emitter perimeter, reverse stress voltage, stress-enhancing voltage, and stress charge.
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M3 - Conference contribution
AN - SCOPUS:0027035852
SN - 0780305353
T3 - Proc 92 Int Conf Microelectron Test Struct ICMTS 92
SP - 111
EP - 114
BT - Proc 92 Int Conf Microelectron Test Struct ICMTS 92
PB - Publ by IEEE
T2 - Proceedings of the 1992 International Conference on Microelectronic Test Structures - ICMTS 92
Y2 - 16 March 1992 through 19 March 1992
ER -