Test structure and experimental analysis of bipolar hot-carrier degradation including stress field effect

Hiromi Shimamoto, Masamichi Tanabe, Takahiro Onai, Katsuyoshi Washio, Tohru Nakamura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The authors describe test transistors with different emitter-base breakdown voltages and an experimental analysis to predict hot-carrier degradation, including the stress field effect, in advanced high-speed self-aligned bipolar transistors. Test transistors were fabricated with different links of extrinsic to intrinsic bases, that is, transistors had different reverse I-V characteristics of the emitter-base junction. Experimental evidence showed that the dependence of the excess base current on stress can be expressed using emitter perimeter, reverse stress voltage, stress-enhancing voltage, and stress charge.

Original languageEnglish
Title of host publicationProc 92 Int Conf Microelectron Test Struct ICMTS 92
PublisherPubl by IEEE
Pages111-114
Number of pages4
ISBN (Print)0780305353
Publication statusPublished - 1992 Dec 1
Externally publishedYes
EventProceedings of the 1992 International Conference on Microelectronic Test Structures - ICMTS 92 - San Diego, CA, USA
Duration: 1992 Mar 161992 Mar 19

Publication series

NameProc 92 Int Conf Microelectron Test Struct ICMTS 92

Other

OtherProceedings of the 1992 International Conference on Microelectronic Test Structures - ICMTS 92
CitySan Diego, CA, USA
Period92/3/1692/3/19

ASJC Scopus subject areas

  • Engineering(all)

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