Test structure and experimental analysis of bipolar hot-carrier degradation including stress field effect

Hiromi Shimamoto; Masamichi Tanabe; Takahiro Onai; Katsuyoshi Washio; Tohru Nakamura

Test structure and experimental analysis of bipolar hot-carrier degradation including stress field effect

Hiromi Shimamoto, Masamichi Tanabe, Takahiro Onai, Katsuyoshi Washio, Tohru Nakamura

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The authors describe test transistors with different emitter-base breakdown voltages and an experimental analysis to predict hot-carrier degradation, including the stress field effect, in advanced high-speed self-aligned bipolar transistors. Test transistors were fabricated with different links of extrinsic to intrinsic bases, that is, transistors had different reverse I-V characteristics of the emitter-base junction. Experimental evidence showed that the dependence of the excess base current on stress can be expressed using emitter perimeter, reverse stress voltage, stress-enhancing voltage, and stress charge.

Original language	English
Title of host publication	Proc 92 Int Conf Microelectron Test Struct ICMTS 92
Publisher	Publ by IEEE
Pages	111-114
Number of pages	4
ISBN (Print)	0780305353
Publication status	Published - 1992
Externally published	Yes
Event	Proceedings of the 1992 International Conference on Microelectronic Test Structures - ICMTS 92 - San Diego, CA, USA Duration: 1992 Mar 16 → 1992 Mar 19

Publication series

Name	Proc 92 Int Conf Microelectron Test Struct ICMTS 92

Other

Other	Proceedings of the 1992 International Conference on Microelectronic Test Structures - ICMTS 92
City	San Diego, CA, USA
Period	92/3/16 → 92/3/19

ASJC Scopus subject areas

Engineering(all)

Cite this

Test structure and experimental analysis of bipolar hot-carrier degradation including stress field effect. / Shimamoto, Hiromi; Tanabe, Masamichi; Onai, Takahiro; Washio, Katsuyoshi; Nakamura, Tohru.

Proc 92 Int Conf Microelectron Test Struct ICMTS 92. Publ by IEEE, 1992. p. 111-114 (Proc 92 Int Conf Microelectron Test Struct ICMTS 92).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shimamoto, H, Tanabe, M, Onai, T, Washio, K & Nakamura, T 1992, Test structure and experimental analysis of bipolar hot-carrier degradation including stress field effect. in Proc 92 Int Conf Microelectron Test Struct ICMTS 92. Proc 92 Int Conf Microelectron Test Struct ICMTS 92, Publ by IEEE, pp. 111-114, Proceedings of the 1992 International Conference on Microelectronic Test Structures - ICMTS 92, San Diego, CA, USA, 92/3/16.

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abstract = "The authors describe test transistors with different emitter-base breakdown voltages and an experimental analysis to predict hot-carrier degradation, including the stress field effect, in advanced high-speed self-aligned bipolar transistors. Test transistors were fabricated with different links of extrinsic to intrinsic bases, that is, transistors had different reverse I-V characteristics of the emitter-base junction. Experimental evidence showed that the dependence of the excess base current on stress can be expressed using emitter perimeter, reverse stress voltage, stress-enhancing voltage, and stress charge.",

author = "Hiromi Shimamoto and Masamichi Tanabe and Takahiro Onai and Katsuyoshi Washio and Tohru Nakamura",

year = "1992",

language = "English",

isbn = "0780305353",

series = "Proc 92 Int Conf Microelectron Test Struct ICMTS 92",

publisher = "Publ by IEEE",

pages = "111--114",

booktitle = "Proc 92 Int Conf Microelectron Test Struct ICMTS 92",

note = "Proceedings of the 1992 International Conference on Microelectronic Test Structures - ICMTS 92 ; Conference date: 16-03-1992 Through 19-03-1992",

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T1 - Test structure and experimental analysis of bipolar hot-carrier degradation including stress field effect

AU - Shimamoto, Hiromi

AU - Tanabe, Masamichi

AU - Onai, Takahiro

AU - Washio, Katsuyoshi

AU - Nakamura, Tohru

PY - 1992

Y1 - 1992

N2 - The authors describe test transistors with different emitter-base breakdown voltages and an experimental analysis to predict hot-carrier degradation, including the stress field effect, in advanced high-speed self-aligned bipolar transistors. Test transistors were fabricated with different links of extrinsic to intrinsic bases, that is, transistors had different reverse I-V characteristics of the emitter-base junction. Experimental evidence showed that the dependence of the excess base current on stress can be expressed using emitter perimeter, reverse stress voltage, stress-enhancing voltage, and stress charge.

AB - The authors describe test transistors with different emitter-base breakdown voltages and an experimental analysis to predict hot-carrier degradation, including the stress field effect, in advanced high-speed self-aligned bipolar transistors. Test transistors were fabricated with different links of extrinsic to intrinsic bases, that is, transistors had different reverse I-V characteristics of the emitter-base junction. Experimental evidence showed that the dependence of the excess base current on stress can be expressed using emitter perimeter, reverse stress voltage, stress-enhancing voltage, and stress charge.

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M3 - Conference contribution

AN - SCOPUS:0027035852

SN - 0780305353

T3 - Proc 92 Int Conf Microelectron Test Struct ICMTS 92

SP - 111

EP - 114

BT - Proc 92 Int Conf Microelectron Test Struct ICMTS 92

PB - Publ by IEEE

T2 - Proceedings of the 1992 International Conference on Microelectronic Test Structures - ICMTS 92

Y2 - 16 March 1992 through 19 March 1992

ER -

Test structure and experimental analysis of bipolar hot-carrier degradation including stress field effect

Abstract

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ASJC Scopus subject areas

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