TY - JOUR
T1 - Ternary TiAlGe ohmic contacts for p-type 4H-SiC
AU - Sakai, T.
AU - Nitta, K.
AU - Tsukimoto, S.
AU - Moriyama, M.
AU - Murakami, Masanori
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2004/2/15
Y1 - 2004/2/15
N2 - Silicon carbide (SiC) is a strong candidate material of next generation semiconductor devices, because SiC has excellent intrinsic properties such as a wide band gap, a high breakdown voltage, and a high thermal conductivity. However, there are several technical issues which need to be overcome to realize high power, high frequencies, and/or high temperature devices. This paper aims to further reduce the annealing temperature of ohmic contact formation by adding a thin Ge layer to the conventional TiAl contacts.
AB - Silicon carbide (SiC) is a strong candidate material of next generation semiconductor devices, because SiC has excellent intrinsic properties such as a wide band gap, a high breakdown voltage, and a high thermal conductivity. However, there are several technical issues which need to be overcome to realize high power, high frequencies, and/or high temperature devices. This paper aims to further reduce the annealing temperature of ohmic contact formation by adding a thin Ge layer to the conventional TiAl contacts.
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U2 - 10.1063/1.1643772
DO - 10.1063/1.1643772
M3 - Article
AN - SCOPUS:1542306762
VL - 95
SP - 2187
EP - 2189
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 4
ER -