Ternary TiAlGe ohmic contacts for p-type 4H-SiC

T. Sakai, K. Nitta, S. Tsukimoto, M. Moriyama, Masanori Murakami

    Research output: Contribution to journalArticlepeer-review

    12 Citations (Scopus)

    Abstract

    Silicon carbide (SiC) is a strong candidate material of next generation semiconductor devices, because SiC has excellent intrinsic properties such as a wide band gap, a high breakdown voltage, and a high thermal conductivity. However, there are several technical issues which need to be overcome to realize high power, high frequencies, and/or high temperature devices. This paper aims to further reduce the annealing temperature of ohmic contact formation by adding a thin Ge layer to the conventional TiAl contacts.

    Original languageEnglish
    Pages (from-to)2187-2189
    Number of pages3
    JournalJournal of Applied Physics
    Volume95
    Issue number4
    DOIs
    Publication statusPublished - 2004 Feb 15

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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