Abstract
Silicon carbide (SiC) is a strong candidate material of next generation semiconductor devices, because SiC has excellent intrinsic properties such as a wide band gap, a high breakdown voltage, and a high thermal conductivity. However, there are several technical issues which need to be overcome to realize high power, high frequencies, and/or high temperature devices. This paper aims to further reduce the annealing temperature of ohmic contact formation by adding a thin Ge layer to the conventional TiAl contacts.
Original language | English |
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Pages (from-to) | 2187-2189 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 95 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2004 Feb 15 |
ASJC Scopus subject areas
- Physics and Astronomy(all)