Ternary TiAlGe ohmic contacts for p-type 4H-SiC

Silicon carbide (SiC) is a strong candidate material of next generation semiconductor devices, because SiC has excellent intrinsic properties such as a wide band gap, a high breakdown voltage, and a high thermal conductivity. However, there are several technical issues which need to be overcome to realize high power, high frequencies, and/or high temperature devices. This paper aims to further reduce the annealing temperature of ohmic contact formation by adding a thin Ge layer to the conventional TiAl contacts.