Termination mechanism of inversion domains by stacking faults in GaN

C. Iwamoto, X. Q. Shen, H. Okumura, H. Matsuhata, Y. Ikuhara

    Research output: Contribution to journalArticle

    13 Citations (Scopus)

    Abstract

    A study was performed on the termination mechanism of inversion domains by stacking faults in GaN films. The film was grown on a sapphire substrate by molecular beam epitaxy with intermittent indium exposure during film growth. It was found that although many inversion domains (ID) were generated at the film/substrate interface, stacking faults on the basal plane of GaN, which was formed at the position of indium exposure, were found to play an important role in terminating the growth of ID's.

    Original languageEnglish
    Pages (from-to)3264-3269
    Number of pages6
    JournalJournal of Applied Physics
    Volume93
    Issue number6
    DOIs
    Publication statusPublished - 2003 Mar 15

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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  • Cite this

    Iwamoto, C., Shen, X. Q., Okumura, H., Matsuhata, H., & Ikuhara, Y. (2003). Termination mechanism of inversion domains by stacking faults in GaN. Journal of Applied Physics, 93(6), 3264-3269. https://doi.org/10.1063/1.1544427