The frequency dependence of the plasma resonant intensity in the tetrahertz range for a short gate-length InGaP/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) was investigated. The plasma resonance excitation was performed by means of interband photoexcitation using the difference-frequency component of a photomixed laser beams. The photomixed laser beam was linearly polarized along the channel axis and was irradiated onto the HEMT channel from the back side. It was found that the double resonant peaks appeared at 1.9 THz and 5.8 THz under moderate photoexcitation at V gs=0.24 V.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)