Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors

Taiichi Otsuji; Mitsuhiro Hanabe; Osamu Ogawara

doi:10.1063/1.1792377

Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors

Taiichi Otsuji, Mitsuhiro Hanabe, Osamu Ogawara

Research output: Contribution to journal › Article › peer-review

152 Citations (Scopus)

Abstract

The frequency dependence of the plasma resonant intensity in the tetrahertz range for a short gate-length InGaP/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) was investigated. The plasma resonance excitation was performed by means of interband photoexcitation using the difference-frequency component of a photomixed laser beams. The photomixed laser beam was linearly polarized along the channel axis and was irradiated onto the HEMT channel from the back side. It was found that the double resonant peaks appeared at 1.9 THz and 5.8 THz under moderate photoexcitation at V _gs=0.24 V.

Original language	English
Pages (from-to)	2119-2121
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	11
DOIs	https://doi.org/10.1063/1.1792377
Publication status	Published - 2004 Sep 13
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors",

abstract = "The frequency dependence of the plasma resonant intensity in the tetrahertz range for a short gate-length InGaP/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) was investigated. The plasma resonance excitation was performed by means of interband photoexcitation using the difference-frequency component of a photomixed laser beams. The photomixed laser beam was linearly polarized along the channel axis and was irradiated onto the HEMT channel from the back side. It was found that the double resonant peaks appeared at 1.9 THz and 5.8 THz under moderate photoexcitation at V gs=0.24 V.",

author = "Taiichi Otsuji and Mitsuhiro Hanabe and Osamu Ogawara",

note = "Funding Information: The authors thank Dr. M. Takigawa, Dr. T. Hirose, and Dr. T. Suzuki of Fujitsu Laboratories for providing the p-HEMT samples. They also thank Professor V. Ryzhii of the University of Aizu for his valuable discussion. This work was supported in part by Grant-in-Aid for Scientific Research B (No. 13450147) and for Exploratory Research (No. 13875069) from the MEXT, Japan, and by Grant-in-Aid for Promotion of Strategic Research and Development on Information and Communications Technology from the Ministry of Public Management, Home Affairs, Posts and Telecommunications, Japan.",

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doi = "10.1063/1.1792377",

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AU - Otsuji, Taiichi

AU - Hanabe, Mitsuhiro

AU - Ogawara, Osamu

N1 - Funding Information: The authors thank Dr. M. Takigawa, Dr. T. Hirose, and Dr. T. Suzuki of Fujitsu Laboratories for providing the p-HEMT samples. They also thank Professor V. Ryzhii of the University of Aizu for his valuable discussion. This work was supported in part by Grant-in-Aid for Scientific Research B (No. 13450147) and for Exploratory Research (No. 13875069) from the MEXT, Japan, and by Grant-in-Aid for Promotion of Strategic Research and Development on Information and Communications Technology from the Ministry of Public Management, Home Affairs, Posts and Telecommunications, Japan.

PY - 2004/9/13

Y1 - 2004/9/13

N2 - The frequency dependence of the plasma resonant intensity in the tetrahertz range for a short gate-length InGaP/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) was investigated. The plasma resonance excitation was performed by means of interband photoexcitation using the difference-frequency component of a photomixed laser beams. The photomixed laser beam was linearly polarized along the channel axis and was irradiated onto the HEMT channel from the back side. It was found that the double resonant peaks appeared at 1.9 THz and 5.8 THz under moderate photoexcitation at V gs=0.24 V.

AB - The frequency dependence of the plasma resonant intensity in the tetrahertz range for a short gate-length InGaP/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) was investigated. The plasma resonance excitation was performed by means of interband photoexcitation using the difference-frequency component of a photomixed laser beams. The photomixed laser beam was linearly polarized along the channel axis and was irradiated onto the HEMT channel from the back side. It was found that the double resonant peaks appeared at 1.9 THz and 5.8 THz under moderate photoexcitation at V gs=0.24 V.

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Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors

Abstract

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