Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors

Taiichi Otsuji, Mitsuhiro Hanabe, Osamu Ogawara

Research output: Contribution to journalArticlepeer-review

152 Citations (Scopus)

Abstract

The frequency dependence of the plasma resonant intensity in the tetrahertz range for a short gate-length InGaP/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) was investigated. The plasma resonance excitation was performed by means of interband photoexcitation using the difference-frequency component of a photomixed laser beams. The photomixed laser beam was linearly polarized along the channel axis and was irradiated onto the HEMT channel from the back side. It was found that the double resonant peaks appeared at 1.9 THz and 5.8 THz under moderate photoexcitation at V gs=0.24 V.

Original languageEnglish
Pages (from-to)2119-2121
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number11
DOIs
Publication statusPublished - 2004 Sep 13
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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