Terahertz plasma-wave excitation in 80-nm gate-length GaAs MESFET by photomixing long-wavelength CW laser sources

T. Otsuji, Y. Kanamaru, H. Kitamura, S. Nakae

Research output: Contribution to conferencePaperpeer-review

6 Citations (Scopus)

Abstract

The terahertz (THz) plasma resonant phenomena exhibited by semiconducting gallium arsenide based high electron mobility transistors (HEMT) is discussed. The terahertz excitation was performed by photomixing two sources in different frequency generations. The modulated DC drain-source components were measured using a lock-in amplifier. The measurements verified that the plasma resonance frequency is controlled by a wide terahertz range.

Original languageEnglish
Pages97-98
Number of pages2
Publication statusPublished - 2001 Jan 1
Externally publishedYes
EventDevice Research Conference (DRC) - Notre Dame, IN, United States
Duration: 2001 Jun 252001 Jun 27

Other

OtherDevice Research Conference (DRC)
Country/TerritoryUnited States
CityNotre Dame, IN
Period01/6/2501/6/27

ASJC Scopus subject areas

  • Engineering(all)

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