Terahertz plasma field effect transistors

W. Knap, D. Coquillat, N. Dyakonova, D. But, T. Otsuji, F. Teppe

Research output: Chapter in Book/Report/Conference proceedingChapter

5 Citations (Scopus)

Abstract

The channel of the field effect transistor can operate as a cavity for plasma waves. For the electrons with high enough mobility, the plasma waves can propagate in field effect transistors (FETs) channel leading to resonant Terahertz (THz) emission or detection. In the low mobility case, plasma oscillations are overdamped, but a plasma density perturbation can be induced by incoming THz radiation. This perturbation can lead to efficient broadband THz detection. We present an overview of the main experimental results concerning the plasma oscillations in field effect transistors for the generation and the detection of terahertz radiations.

Original languageEnglish
Title of host publicationPhysics and Applications of Terahertz Radiation
PublisherSpringer Verlag
Pages77-100
Number of pages24
ISBN (Print)9789400738362
DOIs
Publication statusPublished - 2014

Publication series

NameSpringer Series in Optical Sciences
Volume173
ISSN (Print)0342-4111
ISSN (Electronic)1556-1534

Keywords

  • Broadband detection
  • Channel instability
  • Field-effect transistor
  • Plasma oscillations
  • Resonant detection
  • Terahertz detector

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Terahertz plasma field effect transistors'. Together they form a unique fingerprint.

Cite this