Terahertz photomixing in Strained silicon MODFET

Y. M. Meziani, A. El Moutaouakil, E. Velazquez, E. Diez, K. Fobelets, T. Otsuji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Strained-Si modulation doped • eld effect transistors have been studied as a photomixer within terahertz range. It was subjected to two CW lasers where δf=|f1-f2|=4 THz. A clear signal was observed with maximum located at around Vg=-0.15V and interpreted as due to the oscillation of the plasma waves under the gate bias.

Original languageEnglish
Title of host publicationIRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide
DOIs
Publication statusPublished - 2010 Nov 30
Event35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010 - Rome, Italy
Duration: 2010 Sep 52010 Sep 10

Publication series

NameIRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide

Other

Other35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010
CountryItaly
CityRome
Period10/9/510/9/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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