Abstract
We propose and evaluate the excitation of terahertz (THz) oscillations in a heterostructure photomixing device based on the integration of a high-electron-mobility transistor (HEMT) and quantum-well infrared photodetector (QWIP) caused by middle or far infrared signals. The transient infrared radiation results in the ac current across the QWIP active region. This ac current excites THz plasma oscillations in the HEMT channel and, consequently, oscillating charges in contacts and an antenna that leads to THz emission. We develop a device model for HEMT-QWIP photomixer which combines both analytical description of electron processes and their ensemble Monte Carlo particle modeling.
Original language | English |
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Title of host publication | International Topical Meeting on Microwave Photonics, MWP 2005 |
Pages | 347-350 |
Number of pages | 4 |
Volume | 2005 |
Publication status | Published - 2005 Dec 1 |
Event | International Topical Meeting on Microwave Photonics, MWP 2005 - Seoul, Korea, Republic of Duration: 2005 Oct 12 → 2005 Oct 14 |
Other
Other | International Topical Meeting on Microwave Photonics, MWP 2005 |
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Country/Territory | Korea, Republic of |
City | Seoul |
Period | 05/10/12 → 05/10/14 |
Keywords
- High-electron mobility transistor
- Photomixing
- Plasma oscillations
- Quantum-well infrared photodetector
- Terahertz radiation
ASJC Scopus subject areas
- Engineering(all)