Terahertz photomixing in heterostructure device based on integration of high-electron mobility transistor and quantum-well infrared photodetector

V. Ryzhii, M. Ryzhii, I. Khmyrova, Taiichi Otsuji, M. S. Shur

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We propose and evaluate the excitation of terahertz (THz) oscillations in a heterostructure photomixing device based on the integration of a high-electron-mobility transistor (HEMT) and quantum-well infrared photodetector (QWIP) caused by middle or far infrared signals. The transient infrared radiation results in the ac current across the QWIP active region. This ac current excites THz plasma oscillations in the HEMT channel and, consequently, oscillating charges in contacts and an antenna that leads to THz emission. We develop a device model for HEMT-QWIP photomixer which combines both analytical description of electron processes and their ensemble Monte Carlo particle modeling.

Original languageEnglish
Title of host publicationInternational Topical Meeting on Microwave Photonics, MWP 2005
Pages347-350
Number of pages4
Volume2005
Publication statusPublished - 2005 Dec 1
EventInternational Topical Meeting on Microwave Photonics, MWP 2005 - Seoul, Korea, Republic of
Duration: 2005 Oct 122005 Oct 14

Other

OtherInternational Topical Meeting on Microwave Photonics, MWP 2005
CountryKorea, Republic of
CitySeoul
Period05/10/1205/10/14

Keywords

  • High-electron mobility transistor
  • Photomixing
  • Plasma oscillations
  • Quantum-well infrared photodetector
  • Terahertz radiation

ASJC Scopus subject areas

  • Engineering(all)

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