Terahertz photomixing in heterostructure device based on integration of high-electron mobility transistor and quantum-well infrared photodetector

V. Ryzhii; M. Ryzhii; I. Khmyrova; Taiichi Otsuji; M. S. Shur

Terahertz photomixing in heterostructure device based on integration of high-electron mobility transistor and quantum-well infrared photodetector

V. Ryzhii, M. Ryzhii, I. Khmyrova, Taiichi Otsuji, M. S. Shur

Broadband Engineering Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We propose and evaluate the excitation of terahertz (THz) oscillations in a heterostructure photomixing device based on the integration of a high-electron-mobility transistor (HEMT) and quantum-well infrared photodetector (QWIP) caused by middle or far infrared signals. The transient infrared radiation results in the ac current across the QWIP active region. This ac current excites THz plasma oscillations in the HEMT channel and, consequently, oscillating charges in contacts and an antenna that leads to THz emission. We develop a device model for HEMT-QWIP photomixer which combines both analytical description of electron processes and their ensemble Monte Carlo particle modeling.

Original language	English
Title of host publication	International Topical Meeting on Microwave Photonics, MWP 2005
Pages	347-350
Number of pages	4
Volume	2005
Publication status	Published - 2005 Dec 1
Event	International Topical Meeting on Microwave Photonics, MWP 2005 - Seoul, Korea, Republic of Duration: 2005 Oct 12 → 2005 Oct 14

Other

Other	International Topical Meeting on Microwave Photonics, MWP 2005
Country/Territory	Korea, Republic of
City	Seoul
Period	05/10/12 → 05/10/14

Keywords

High-electron mobility transistor
Photomixing
Plasma oscillations
Quantum-well infrared photodetector
Terahertz radiation

ASJC Scopus subject areas

Engineering(all)

Cite this

Terahertz photomixing in heterostructure device based on integration of high-electron mobility transistor and quantum-well infrared photodetector. / Ryzhii, V.; Ryzhii, M.; Khmyrova, I.; Otsuji, Taiichi; Shur, M. S.

International Topical Meeting on Microwave Photonics, MWP 2005. Vol. 2005 2005. p. 347-350 1590337.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ryzhii, V, Ryzhii, M, Khmyrova, I, Otsuji, T & Shur, MS 2005, Terahertz photomixing in heterostructure device based on integration of high-electron mobility transistor and quantum-well infrared photodetector. in International Topical Meeting on Microwave Photonics, MWP 2005. vol. 2005, 1590337, pp. 347-350, International Topical Meeting on Microwave Photonics, MWP 2005, Seoul, Korea, Republic of, 05/10/12.

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title = "Terahertz photomixing in heterostructure device based on integration of high-electron mobility transistor and quantum-well infrared photodetector",

abstract = "We propose and evaluate the excitation of terahertz (THz) oscillations in a heterostructure photomixing device based on the integration of a high-electron-mobility transistor (HEMT) and quantum-well infrared photodetector (QWIP) caused by middle or far infrared signals. The transient infrared radiation results in the ac current across the QWIP active region. This ac current excites THz plasma oscillations in the HEMT channel and, consequently, oscillating charges in contacts and an antenna that leads to THz emission. We develop a device model for HEMT-QWIP photomixer which combines both analytical description of electron processes and their ensemble Monte Carlo particle modeling.",

keywords = "High-electron mobility transistor, Photomixing, Plasma oscillations, Quantum-well infrared photodetector, Terahertz radiation",

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AU - Ryzhii, V.

AU - Ryzhii, M.

AU - Khmyrova, I.

AU - Otsuji, Taiichi

AU - Shur, M. S.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - We propose and evaluate the excitation of terahertz (THz) oscillations in a heterostructure photomixing device based on the integration of a high-electron-mobility transistor (HEMT) and quantum-well infrared photodetector (QWIP) caused by middle or far infrared signals. The transient infrared radiation results in the ac current across the QWIP active region. This ac current excites THz plasma oscillations in the HEMT channel and, consequently, oscillating charges in contacts and an antenna that leads to THz emission. We develop a device model for HEMT-QWIP photomixer which combines both analytical description of electron processes and their ensemble Monte Carlo particle modeling.

AB - We propose and evaluate the excitation of terahertz (THz) oscillations in a heterostructure photomixing device based on the integration of a high-electron-mobility transistor (HEMT) and quantum-well infrared photodetector (QWIP) caused by middle or far infrared signals. The transient infrared radiation results in the ac current across the QWIP active region. This ac current excites THz plasma oscillations in the HEMT channel and, consequently, oscillating charges in contacts and an antenna that leads to THz emission. We develop a device model for HEMT-QWIP photomixer which combines both analytical description of electron processes and their ensemble Monte Carlo particle modeling.

KW - High-electron mobility transistor

KW - Photomixing

KW - Plasma oscillations

KW - Quantum-well infrared photodetector

KW - Terahertz radiation

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SN - 8995004339

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VL - 2005

SP - 347

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BT - International Topical Meeting on Microwave Photonics, MWP 2005

T2 - International Topical Meeting on Microwave Photonics, MWP 2005

Y2 - 12 October 2005 through 14 October 2005

ER -

Terahertz photomixing in heterostructure device based on integration of high-electron mobility transistor and quantum-well infrared photodetector

Abstract

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Keywords

ASJC Scopus subject areas

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