Terahertz light emitting transistor based on current injection dualgate graphene-channel FET

Deepika Yadav, Youssef Tobah, Kenta Sugawara, Junki Mitsushio, Gen Tamamushi, Takayuki Watanabe, Alexander A. Dubinov, Maxim Ryzhii, Victor Ryzhii, Taiichi Otsuji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on amplified spontaneous broadband terahertz emission in 1-7.6 THz range at 100 K via current injection in a distributed-feedback dual-gate graphene-channel field effect transistor (DFB-DG GFET). The device exhibited a nonlinear threshold-like behavior with respect to the current-injection level. A precise DFB cavity design is expected to transcend the observed spontaneous broadband emission to single-mode THz lasing.

Original languageEnglish
Title of host publication2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017
PublisherIEEE Computer Society
ISBN (Electronic)9781509060481
DOIs
Publication statusPublished - 2017 Oct 12
Event42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017 - Cancun, Quintana Roo, Mexico
Duration: 2017 Aug 272017 Sep 1

Publication series

NameInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
ISSN (Print)2162-2027
ISSN (Electronic)2162-2035

Other

Other42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017
CountryMexico
CityCancun, Quintana Roo
Period17/8/2717/9/1

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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