Terahertz LED based on current injection dual-gate graphene-channel field effect transistors

Deepika Yadav, Youssef Tobah, Kenta Sugawara, Junki Mitsushio, Gen Tamamushi, Takayuki Watanabe, Alexander A. Dubinov, Maxim Ryzhii, Victor Ryzhii, Taiichi Otsuji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Previous studies have shown that optical and/or injection pumping of graphene can enable negative-dynamic conductivity in the terahertz (THz) spectral range, which may lead to new types of THz lasers and light-emitting devices [1-4]. Recently we obtained preliminary results of single-mode THz lasing in a forward-biased graphene structure with a lateral p-i-n junction in a distributed-feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) [5]. In this work, we experimentally observe amplified spontaneous broadband THz emission from 1 to 7.6 THz at 100K by carrier-injection in a population-inverted DFB-DG-GFET, demonstrating the birth of a new type of THz light-emitting diodes.

Original languageEnglish
Title of host publication75th Annual Device Research Conference, DRC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509063277
DOIs
Publication statusPublished - 2017 Aug 1
Event75th Annual Device Research Conference, DRC 2017 - South Bend, United States
Duration: 2017 Jun 252017 Jun 28

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other75th Annual Device Research Conference, DRC 2017
CountryUnited States
CitySouth Bend
Period17/6/2517/6/28

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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