Terahertz graphene lasers: Injection versus optical pumping

Victor Ryzhii, Taiichi Otsuji, Maxim Ryzhii, Vladimir Mitin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We analyze the formation of nonequilibrium states in optically pumped graphene layers and in forward-biased graphene structures with lateral p-i-n junctions and consider the conditions of population inversion and lasing. The model used accounts for intraband and interband relaxation processes as well as deviation of the optical phonon system from equilibrium. As shown, optical pumping suffers from a significant heating of both the electron-hole plasma and the optical phonon system, which can suppress the formation of population inversion. In the graphene structures with p-i-n junction, the injected electrons and holes have relatively low energies, so that the effect of cooling can be rather pronounced, providing a significant advantage of the injection pumping in realization of graphene terahertz lasers.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
PublisherAmerican Institute of Physics Inc.
Pages117-118
Number of pages2
ISBN (Print)9780735411944
DOIs
Publication statusPublished - 2013 Jan 1
Event31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland
Duration: 2012 Jul 292012 Aug 3

Publication series

NameAIP Conference Proceedings
Volume1566
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other31st International Conference on the Physics of Semiconductors, ICPS 2012
CountrySwitzerland
CityZurich
Period12/7/2912/8/3

Keywords

  • Graphene
  • Injection pumping
  • Laser
  • Optical pumping
  • Terahertz
  • p-i-n junction

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Ryzhii, V., Otsuji, T., Ryzhii, M., & Mitin, V. (2013). Terahertz graphene lasers: Injection versus optical pumping. In Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012 (pp. 117-118). (AIP Conference Proceedings; Vol. 1566). American Institute of Physics Inc.. https://doi.org/10.1063/1.4848313