Terahertz emission in an InGaAs-based dual-grating-gate high-electron-mobility transistor plasmonic photomixer

Tomotaka Hosotani, Akira Satou, Taiichi Otsuji

Research output: Contribution to journalArticlepeer-review

Abstract

We report on terahertz (THz) emission from an InGaAs-based DC-current-driven dual-grating-gate high-electron-mobility transistor excited by photomixed dual continuous-wave-infrared (dual-CW-IR) laser irradiation. The difference frequency (δf ) of the dual-CW-IR laser beams was set around the THz plasmon mode frequencies at different bias conditions. The radiation spectra from the device observed at 120 K showed distinctive emissions beyond the black-body radiation, which were promoted by δf-dependent coherent plasmons. The results suggest the occurrence of plasmonic boom instability stimulated by the DC current flow in the 2D channel under pertinent DC bias voltages.

Original languageEnglish
Article number051001
JournalApplied Physics Express
Volume14
Issue number5
DOIs
Publication statusPublished - 2021 May

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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