Terahertz emission from an asymmetric dual-grating-gate InGaAs high-electron-mobility transistor stimulated by plasmonic boom instability

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Asymmetric dual-grating-gate InGaAs high-electron-mobility transistors (ADGG-HEMTs) are studied as plasmonic terahertz (THz) emitters. We experimentally observed THz emission from a fabricated device at 110K. The spectra showed a broadband resonant emission under low d.c. channel currents reflecting radiation decay of thermally excited plasmons. With increasing the current and longitudinal electric field the emission was enhanced in a narrower spectral range suggesting promotion of plasmonic instability. Its threshold behavior suggests the occurrence of plasmonic-boom-type instability.

Original languageEnglish
Title of host publicationIRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves
PublisherIEEE Computer Society
ISBN (Electronic)9781538682852
DOIs
Publication statusPublished - 2019 Sep
Event44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019 - Paris, France
Duration: 2019 Sep 12019 Sep 6

Publication series

NameInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume2019-September
ISSN (Print)2162-2027
ISSN (Electronic)2162-2035

Conference

Conference44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019
CountryFrance
CityParis
Period19/9/119/9/6

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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