Terahertz emission, detection and modulation using two-dimensional plasmons in high-electron-mobility transistors featured by a dual-grating-gate structure

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Abstract

This paper reviews recent advances in emission, detection and modulation of terahertz (THz) radiation using two-dimensional plasmons in high-electron-mobility transistors (HEMMTs) featured by a dual-grating-gate (DGG) structure. The dual grating gates can alternately modulate the 2D electron densities to periodically distribute the plasmonic cavities along the channel, acting as a broadband antenna. The sample was fabricated with standard GaAsor InP-based heterostructure material systems, succeeding in emission and detection of broadband (0.5-6.5 THz) radiation at room temperature with a maximum available THz output power and detection responsivity of ∼ μW and ∼ 10 -10 W/Hz 0.5 from a 30×75 μm 2 single die, respectively, with an excellent power conversion efficiency of 10 -4. The device also can work for intensity modulation of incident THz radiation. We also demonstrate that the DGG-HEMT can work for a fast broadband THz intensity modulator.

Original languageEnglish
Pages (from-to)1266-1271
Number of pages6
JournalProgress in Electromagnetics Research Symposium
Publication statusPublished - 2011 Dec 26
EventProgress in Electromagnetics Research Symposium, PIERS 2011 Marrakesh - Marrakesh, Morocco
Duration: 2011 Mar 202011 Mar 23

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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