Terahertz emission and detection using two dimensional plasmons in semiconductor nano-heterostructures for sensing applications

Taiichi Otsuji, Takayuki Watanabe, Stephane Albon Boubanga Tombet, Tetsuya Suemitsu, Victor Ryzhii, Vyacheslav Popov, Wojciech Knap

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper reports on emission and detection of terahertz radiation using two dimensional (2D) plasmons in semiconductor nano-heterostructures for sensing applications. The device structure is based on a high-electron mobility transistor and incorporates the authors' original asymmetrically interdigitated dual-grating gates. Excellent terahertz emission and detection performances are experimentally demonstrated by using InAlAs/InGaAs/InP heterostructure material systems. Their applications to nondestructive material evaluation based on terahertz imaging are also presented.

Original languageEnglish
Title of host publicationIEEE SENSORS 2013 - Proceedings
PublisherIEEE Computer Society
ISBN (Print)9781467346405
DOIs
Publication statusPublished - 2013 Jan 1
Event12th IEEE SENSORS 2013 Conference - Baltimore, MD, United States
Duration: 2013 Nov 42013 Nov 6

Publication series

NameProceedings of IEEE Sensors

Other

Other12th IEEE SENSORS 2013 Conference
CountryUnited States
CityBaltimore, MD
Period13/11/413/11/6

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Otsuji, T., Watanabe, T., Boubanga Tombet, S. A., Suemitsu, T., Ryzhii, V., Popov, V., & Knap, W. (2013). Terahertz emission and detection using two dimensional plasmons in semiconductor nano-heterostructures for sensing applications. In IEEE SENSORS 2013 - Proceedings [6688150] (Proceedings of IEEE Sensors). IEEE Computer Society. https://doi.org/10.1109/ICSENS.2013.6688150