Terahertz detection related to plasma excitations in nanometer gate length field effect transistor

W. Knap, A. El Fatimy, R. Tauk, S. Boubanga Tombet, F. Teppe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The channel of nanometre field effect transistor can act as a resonant cavity for plasma waves. The frequency of these plasma waves is in the Terahertz range and can be tuned by the gate length and the gate bias. During the last few years Terahertz detection and emission related to plasma wave instabilities in nanometre size field effect transistors was demonstrated experimentally. In this work we review the recent results on sub-THz and THz detection by 50-300nm gate length III-V HEMTs and Si MOSFETs. We present experimental results on the resonant and nonresonant (overdamped) plasma wave detection and discuss possible applications of nanometre field effect transistors as new detectors of THz radiations.

Original languageEnglish
Title of host publicationGroup IV Semiconductor Nanostructures-2006
Pages205-212
Number of pages8
Publication statusPublished - 2007 Jul 4
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: 2006 Nov 272006 Nov 29

Publication series

NameMaterials Research Society Symposium Proceedings
Volume958
ISSN (Print)0272-9172

Other

Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period06/11/2706/11/29

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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