Terahertz detection by GaN/AlGaN transistors

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, A. Cappy

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92 Citations (Scopus)

Abstract

Detection of subterahertz and terahertz radiation by high electron mobility GaN/AlGaN transistors in the 0.2-2.5THz frequency range (much higher than the cutoff frequency of the transistors) is reported. Experiments were performed in the temperature range 4-300K. For the lowest temperatures, a resonant response was observed. The resonances were interpreted as plasma wave excitations in gated two-dimensional electron gas. Non-resonant detection was observed at temperatures above 100K. Estimates for noise equivalent power show that these transistors can be used as efficient detectors of terahertz radiation at cryogenic and room temperatures.

Original languageEnglish
Pages (from-to)1342-1344
Number of pages3
JournalElectronics Letters
Volume42
Issue number23
DOIs
Publication statusPublished - 2006 Nov 16

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    El Fatimy, A., Boubanga Tombet, S., Teppe, F., Knap, W., Veksler, D. B., Rumyantsev, S., Shur, M. S., Pala, N., Gaska, R., Fareed, Q., Hu, X., Seliuta, D., Valusis, G., Gaquiere, C., Theron, D., & Cappy, A. (2006). Terahertz detection by GaN/AlGaN transistors. Electronics Letters, 42(23), 1342-1344. https://doi.org/10.1049/el:20062452