Terahertz and infrared detectors based on graphene structures

Victor Ryzhii; Maxim Ryzhii; Nadezhda Ryabova; Vladimir Mitin; Taiichi Otsuji

doi:10.1016/j.infrared.2010.12.034

Terahertz and infrared detectors based on graphene structures

Victor Ryzhii, Maxim Ryzhii, Nadezhda Ryabova, Vladimir Mitin, Taiichi Otsuji

Broadband Engineering Division

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

We consider newly proposed terahertz and infrared interband detectors based on multiple-graphene-layer structures with p-i-n junctions. Using the developed device model, we calculate the photodetector characteristics (responsivity and dark current limited detectivity) and compare them with the characteristics of other photodetectors. It is shown that due to relatively high quantum efficiency and weakened thermogeneration processes, the detectors under consideration can exhibit superior performance.

Original language	English
Pages (from-to)	302-305
Number of pages	4
Journal	Infrared Physics and Technology
Volume	54
Issue number	3
DOIs	https://doi.org/10.1016/j.infrared.2010.12.034
Publication status	Published - 2011 May 1

Keywords

Dark current
Detectivity
Detector
Graphene
Photocurrent
Responsivity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Access to Document

10.1016/j.infrared.2010.12.034

Fingerprint Dive into the research topics of 'Terahertz and infrared detectors based on graphene structures'. Together they form a unique fingerprint.

Cite this

@article{82365d65be734838969c6406e498deed,

title = "Terahertz and infrared detectors based on graphene structures",

abstract = "We consider newly proposed terahertz and infrared interband detectors based on multiple-graphene-layer structures with p-i-n junctions. Using the developed device model, we calculate the photodetector characteristics (responsivity and dark current limited detectivity) and compare them with the characteristics of other photodetectors. It is shown that due to relatively high quantum efficiency and weakened thermogeneration processes, the detectors under consideration can exhibit superior performance.",

keywords = "Dark current, Detectivity, Detector, Graphene, Photocurrent, Responsivity",

author = "Victor Ryzhii and Maxim Ryzhii and Nadezhda Ryabova and Vladimir Mitin and Taiichi Otsuji",

year = "2011",

month = may,

day = "1",

doi = "10.1016/j.infrared.2010.12.034",

language = "English",

volume = "54",

pages = "302--305",

journal = "Infrared Physics and Technology",

issn = "1350-4495",

publisher = "Elsevier",

number = "3",

}

TY - JOUR

T1 - Terahertz and infrared detectors based on graphene structures

AU - Ryzhii, Victor

AU - Ryzhii, Maxim

AU - Ryabova, Nadezhda

AU - Mitin, Vladimir

AU - Otsuji, Taiichi

PY - 2011/5/1

Y1 - 2011/5/1

N2 - We consider newly proposed terahertz and infrared interband detectors based on multiple-graphene-layer structures with p-i-n junctions. Using the developed device model, we calculate the photodetector characteristics (responsivity and dark current limited detectivity) and compare them with the characteristics of other photodetectors. It is shown that due to relatively high quantum efficiency and weakened thermogeneration processes, the detectors under consideration can exhibit superior performance.

AB - We consider newly proposed terahertz and infrared interband detectors based on multiple-graphene-layer structures with p-i-n junctions. Using the developed device model, we calculate the photodetector characteristics (responsivity and dark current limited detectivity) and compare them with the characteristics of other photodetectors. It is shown that due to relatively high quantum efficiency and weakened thermogeneration processes, the detectors under consideration can exhibit superior performance.

KW - Dark current

KW - Detectivity

KW - Detector

KW - Graphene

KW - Photocurrent

KW - Responsivity

UR - http://www.scopus.com/inward/record.url?scp=79955031859&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955031859&partnerID=8YFLogxK

U2 - 10.1016/j.infrared.2010.12.034

DO - 10.1016/j.infrared.2010.12.034

M3 - Article

AN - SCOPUS:79955031859

VL - 54

SP - 302

EP - 305

JO - Infrared Physics and Technology

JF - Infrared Physics and Technology

SN - 1350-4495

IS - 3

ER -