Temporary spin-on glass bonding technologies for via-last/backside-via 3D integration using multichip self-assembly

H. Hashiguchi, T. Fukushima, A. Noriki, H. Kino, K. W. Lee, T. Tanaka, M. Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

In this study, we proposed and demonstrated self-assembly-based via-last/backside-via 3D integration using a temporary spin-on glass (SOG) bonding technology. A hydrogenated amorphous silicon (a-Si:H) was employed as a debonding layer. Known good dies (KGDs) were precisely self-assembled right side up on an electrostatic carrier wafer by surface tension of water, and then, the KGDs were fixed by applying DC voltage to the carrier. After that, the KGDs were temporarily bonded and transferred to another support glass wafer on which the a-Si:H and SOG layers were deposited. After multichip thinning, Cu-TSVs were formed on the KGDs. The resulting TSV daisy chains showed good electrical characteristics. The KGDs can be debonded with a 308-nm laser and transferred again to target interposer wafers.

Original languageEnglish
Title of host publicationProceedings - Electronic Components and Technology Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages856-861
Number of pages6
ISBN (Electronic)9781479924073
DOIs
Publication statusPublished - 2014 Sep 11
Event64th Electronic Components and Technology Conference, ECTC 2014 - Orlando, United States
Duration: 2014 May 272014 May 30

Publication series

NameProceedings - Electronic Components and Technology Conference
ISSN (Print)0569-5503

Other

Other64th Electronic Components and Technology Conference, ECTC 2014
CountryUnited States
CityOrlando
Period14/5/2714/5/30

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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