Temporary Bonding and De-Bonding for Multichip-to-Wafer 3D Integration Process Using Spin-on Glass and Hydrogenated Amorphous Si

M. Murugesan, T. Fukushima, M. Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Temporary bonding and de-bonding techniques using respectively spin-on glass (SOG) and hydrogenated amorphous-Si (a-Si:H) have been examined for multichip-to-wafer three-dimensional (3D) integration process. In this study, a 280 um-thick known good dies of 5 mm × 5 mm in size were temporarily bonded to a pre-deposited (a-Si:H (100 nm) and SOG (400 nm)) support glass wafer. After completing the die thinning and TSV formation processes, the dies were de-bonded using 248 nm excimer laser. The surfaces of de-bonded chip/wafer and glass substrate were meticulously investigated using x-ray photoelectron spectroscopy (XPS). From C1s, O1s, and Si1s XPS data, it is inferred that the de-bonding occurs in the a-Si:H layer. It reveals that the interface between the SOG and a-Si:H layer was highly intact, and the bonding strength is good enough to withstand the harsh environment during die/wafer thinning and TSV formation processes.

Original languageEnglish
Title of host publicationProceedings - IEEE 67th Electronic Components and Technology Conference, ECTC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1237-1242
Number of pages6
ISBN (Electronic)9781509043323
DOIs
Publication statusPublished - 2017 Aug 1
Event67th IEEE Electronic Components and Technology Conference, ECTC 2017 - Lake Buena Vista, United States
Duration: 2017 May 302017 Jun 2

Publication series

NameProceedings - Electronic Components and Technology Conference
ISSN (Print)0569-5503

Other

Other67th IEEE Electronic Components and Technology Conference, ECTC 2017
CountryUnited States
CityLake Buena Vista
Period17/5/3017/6/2

Keywords

  • A-Si:H
  • SOG
  • XPS

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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