Abstract
Pyrometric interferometry has been observed during gas-source molecular beam epitaxy (GSMBE) of 3C-SiC on Si substrate using monomethyl silane. The period of the "temperature oscillation" is shown to correspond to λ/2n, with the λ and n being the wavelength used in the monochromatic optical pyrometry and the refractive index of the grown film, respectively. As is the case for other heteroepitaxies, pyrometric interferometry may provide a feasible real-time monitoring method for the growth of 3C-SiC film on Si substrates.
Original language | English |
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Pages (from-to) | 6235-6237 |
Number of pages | 3 |
Journal | Applied Surface Science |
Volume | 254 |
Issue number | 19 |
DOIs | |
Publication status | Published - 2008 Jul 30 |
Keywords
- 3C-SiC
- GSMBE
- Heteroepitaxy
- Pyrometric interferometry
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films