"Temperature oscillation" as a real-time monitoring of the growth of 3C-SiC on Si substrate

Eiji Saito; Atsushi Konno; Takashi Ito; Kanji Yasui; Hideki Nakazawa; Tetsuo Endoh; Yuzuru Narita; Maki Suemitsu

doi:10.1016/j.apsusc.2008.02.190

"Temperature oscillation" as a real-time monitoring of the growth of 3C-SiC on Si substrate

Eiji Saito, Atsushi Konno, Takashi Ito, Kanji Yasui, Hideki Nakazawa, Tetsuo Endoh, Yuzuru Narita, Maki Suemitsu

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Pyrometric interferometry has been observed during gas-source molecular beam epitaxy (GSMBE) of 3C-SiC on Si substrate using monomethyl silane. The period of the "temperature oscillation" is shown to correspond to λ/2n, with the λ and n being the wavelength used in the monochromatic optical pyrometry and the refractive index of the grown film, respectively. As is the case for other heteroepitaxies, pyrometric interferometry may provide a feasible real-time monitoring method for the growth of 3C-SiC film on Si substrates.

Original language	English
Pages (from-to)	6235-6237
Number of pages	3
Journal	Applied Surface Science
Volume	254
Issue number	19
DOIs	https://doi.org/10.1016/j.apsusc.2008.02.190
Publication status	Published - 2008 Jul 30

Keywords

3C-SiC
GSMBE
Heteroepitaxy
Pyrometric interferometry

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "{"}Temperature oscillation{"} as a real-time monitoring of the growth of 3C-SiC on Si substrate",

abstract = "Pyrometric interferometry has been observed during gas-source molecular beam epitaxy (GSMBE) of 3C-SiC on Si substrate using monomethyl silane. The period of the {"}temperature oscillation{"} is shown to correspond to λ/2n, with the λ and n being the wavelength used in the monochromatic optical pyrometry and the refractive index of the grown film, respectively. As is the case for other heteroepitaxies, pyrometric interferometry may provide a feasible real-time monitoring method for the growth of 3C-SiC film on Si substrates.",

keywords = "3C-SiC, GSMBE, Heteroepitaxy, Pyrometric interferometry",

author = "Eiji Saito and Atsushi Konno and Takashi Ito and Kanji Yasui and Hideki Nakazawa and Tetsuo Endoh and Yuzuru Narita and Maki Suemitsu",

year = "2008",

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doi = "10.1016/j.apsusc.2008.02.190",

language = "English",

volume = "254",

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journal = "Applied Surface Science",

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T1 - "Temperature oscillation" as a real-time monitoring of the growth of 3C-SiC on Si substrate

AU - Saito, Eiji

AU - Konno, Atsushi

AU - Ito, Takashi

AU - Yasui, Kanji

AU - Nakazawa, Hideki

AU - Endoh, Tetsuo

AU - Narita, Yuzuru

AU - Suemitsu, Maki

PY - 2008/7/30

Y1 - 2008/7/30

N2 - Pyrometric interferometry has been observed during gas-source molecular beam epitaxy (GSMBE) of 3C-SiC on Si substrate using monomethyl silane. The period of the "temperature oscillation" is shown to correspond to λ/2n, with the λ and n being the wavelength used in the monochromatic optical pyrometry and the refractive index of the grown film, respectively. As is the case for other heteroepitaxies, pyrometric interferometry may provide a feasible real-time monitoring method for the growth of 3C-SiC film on Si substrates.

AB - Pyrometric interferometry has been observed during gas-source molecular beam epitaxy (GSMBE) of 3C-SiC on Si substrate using monomethyl silane. The period of the "temperature oscillation" is shown to correspond to λ/2n, with the λ and n being the wavelength used in the monochromatic optical pyrometry and the refractive index of the grown film, respectively. As is the case for other heteroepitaxies, pyrometric interferometry may provide a feasible real-time monitoring method for the growth of 3C-SiC film on Si substrates.

KW - 3C-SiC

KW - GSMBE

KW - Heteroepitaxy

KW - Pyrometric interferometry

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DO - 10.1016/j.apsusc.2008.02.190

M3 - Article

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EP - 6237

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 19

ER -

"Temperature oscillation" as a real-time monitoring of the growth of 3C-SiC on Si substrate

Abstract

Keywords

ASJC Scopus subject areas

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