"Temperature oscillation" as a real-time monitoring of the growth of 3C-SiC on Si substrate

Eiji Saito; Atsushi Konno; Takashi Ito; Kanji Yasui; Hideki Nakazawa; Tetsuo Endoh; Yuzuru Narita; Maki Suemitsu

doi:10.1016/j.apsusc.2008.02.190

"Temperature oscillation" as a real-time monitoring of the growth of 3C-SiC on Si substrate

Eiji Saito, Atsushi Konno, Takashi Ito, Kanji Yasui, Hideki Nakazawa, Tetsuo Endoh, Yuzuru Narita, Maki Suemitsu

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

Pyrometric interferometry has been observed during gas-source molecular beam epitaxy (GSMBE) of 3C-SiC on Si substrate using monomethyl silane. The period of the "temperature oscillation" is shown to correspond to λ/2n, with the λ and n being the wavelength used in the monochromatic optical pyrometry and the refractive index of the grown film, respectively. As is the case for other heteroepitaxies, pyrometric interferometry may provide a feasible real-time monitoring method for the growth of 3C-SiC film on Si substrates.

Original language	English
Pages (from-to)	6235-6237
Number of pages	3
Journal	Applied Surface Science
Volume	254
Issue number	19
DOIs	https://doi.org/10.1016/j.apsusc.2008.02.190
Publication status	Published - 2008 Jul 30

Keywords

3C-SiC
GSMBE
Heteroepitaxy
Pyrometric interferometry

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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Saito, E., Konno, A., Ito, T., Yasui, K., Nakazawa, H., Endoh, T., Narita, Y., & Suemitsu, M. (2008). "Temperature oscillation" as a real-time monitoring of the growth of 3C-SiC on Si substrate. Applied Surface Science, 254(19), 6235-6237. https://doi.org/10.1016/j.apsusc.2008.02.190

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abstract = "Pyrometric interferometry has been observed during gas-source molecular beam epitaxy (GSMBE) of 3C-SiC on Si substrate using monomethyl silane. The period of the {"}temperature oscillation{"} is shown to correspond to λ/2n, with the λ and n being the wavelength used in the monochromatic optical pyrometry and the refractive index of the grown film, respectively. As is the case for other heteroepitaxies, pyrometric interferometry may provide a feasible real-time monitoring method for the growth of 3C-SiC film on Si substrates.",

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AU - Saito, Eiji

AU - Konno, Atsushi

AU - Ito, Takashi

AU - Yasui, Kanji

AU - Nakazawa, Hideki

AU - Endoh, Tetsuo

AU - Narita, Yuzuru

AU - Suemitsu, Maki

PY - 2008/7/30

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