"Temperature oscillation" as a real-time monitoring of the growth of 3C-SiC on Si substrate

Eiji Saito, Atsushi Konno, Takashi Ito, Kanji Yasui, Hideki Nakazawa, Tetsuo Endoh, Yuzuru Narita, Maki Suemitsu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Pyrometric interferometry has been observed during gas-source molecular beam epitaxy (GSMBE) of 3C-SiC on Si substrate using monomethyl silane. The period of the "temperature oscillation" is shown to correspond to λ/2n, with the λ and n being the wavelength used in the monochromatic optical pyrometry and the refractive index of the grown film, respectively. As is the case for other heteroepitaxies, pyrometric interferometry may provide a feasible real-time monitoring method for the growth of 3C-SiC film on Si substrates.

Original languageEnglish
Pages (from-to)6235-6237
Number of pages3
JournalApplied Surface Science
Volume254
Issue number19
DOIs
Publication statusPublished - 2008 Jul 30

Keywords

  • 3C-SiC
  • GSMBE
  • Heteroepitaxy
  • Pyrometric interferometry

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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