Temperature evolution of spin-polarized electron tunneling in silicon nanowire-permalloy lateral spin valve system

Jean Tarun; Shaoyun Huang; Yasuhiro Fukuma; Hiroshi Idzuchi; Yoshi Chika Otani; Naoki Fukata; Koji Ishibashi; Shunri Oda

doi:10.1143/APEX.5.045001

Temperature evolution of spin-polarized electron tunneling in silicon nanowire-permalloy lateral spin valve system

Jean Tarun, Shaoyun Huang, Yasuhiro Fukuma, Hiroshi Idzuchi, Yoshi Chika Otani, Naoki Fukata, Koji Ishibashi, Shunri Oda

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A huge nonlocal spin valve signal over 700Ω has been observed in silicon-nanowire-based lateral spin valve with permalloy electrodes. The magnitude of the observed huge spin signal was quantitatively explained using the conventional spin diffusion model in a one-dimensionally confined silicon channel. From the temperature dependence of the spin signal, the interface spin polarization was found to be strongly depolarized by raising the temperature. This special characteristic can be reasonably explained by considering an increase in the tunneling of thermally activated electrons through the Schottky barrier with an extremely thin depletion layer.

Original language	English
Article number	45001
Journal	Applied Physics Express
Volume	5
Issue number	4
DOIs	https://doi.org/10.1143/APEX.5.045001
Publication status	Published - 2012 Apr
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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@article{5e232535b89742c5a5e0913f2d886493,

title = "Temperature evolution of spin-polarized electron tunneling in silicon nanowire-permalloy lateral spin valve system",

abstract = "A huge nonlocal spin valve signal over 700Ω has been observed in silicon-nanowire-based lateral spin valve with permalloy electrodes. The magnitude of the observed huge spin signal was quantitatively explained using the conventional spin diffusion model in a one-dimensionally confined silicon channel. From the temperature dependence of the spin signal, the interface spin polarization was found to be strongly depolarized by raising the temperature. This special characteristic can be reasonably explained by considering an increase in the tunneling of thermally activated electrons through the Schottky barrier with an extremely thin depletion layer.",

author = "Jean Tarun and Shaoyun Huang and Yasuhiro Fukuma and Hiroshi Idzuchi and Otani, {Yoshi Chika} and Naoki Fukata and Koji Ishibashi and Shunri Oda",

year = "2012",

month = apr,

doi = "10.1143/APEX.5.045001",

language = "English",

volume = "5",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "4",

}

TY - JOUR

T1 - Temperature evolution of spin-polarized electron tunneling in silicon nanowire-permalloy lateral spin valve system

AU - Tarun, Jean

AU - Huang, Shaoyun

AU - Fukuma, Yasuhiro

AU - Idzuchi, Hiroshi

AU - Otani, Yoshi Chika

AU - Fukata, Naoki

AU - Ishibashi, Koji

AU - Oda, Shunri

PY - 2012/4

Y1 - 2012/4

N2 - A huge nonlocal spin valve signal over 700Ω has been observed in silicon-nanowire-based lateral spin valve with permalloy electrodes. The magnitude of the observed huge spin signal was quantitatively explained using the conventional spin diffusion model in a one-dimensionally confined silicon channel. From the temperature dependence of the spin signal, the interface spin polarization was found to be strongly depolarized by raising the temperature. This special characteristic can be reasonably explained by considering an increase in the tunneling of thermally activated electrons through the Schottky barrier with an extremely thin depletion layer.

AB - A huge nonlocal spin valve signal over 700Ω has been observed in silicon-nanowire-based lateral spin valve with permalloy electrodes. The magnitude of the observed huge spin signal was quantitatively explained using the conventional spin diffusion model in a one-dimensionally confined silicon channel. From the temperature dependence of the spin signal, the interface spin polarization was found to be strongly depolarized by raising the temperature. This special characteristic can be reasonably explained by considering an increase in the tunneling of thermally activated electrons through the Schottky barrier with an extremely thin depletion layer.

UR - http://www.scopus.com/inward/record.url?scp=84860116054&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84860116054&partnerID=8YFLogxK

U2 - 10.1143/APEX.5.045001

DO - 10.1143/APEX.5.045001

M3 - Article

AN - SCOPUS:84860116054

VL - 5

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 4

M1 - 45001

ER -

Temperature evolution of spin-polarized electron tunneling in silicon nanowire-permalloy lateral spin valve system

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