Temperature evolution of spin-polarized electron tunneling in silicon nanowire-permalloy lateral spin valve system

Jean Tarun, Shaoyun Huang, Yasuhiro Fukuma, Hiroshi Idzuchi, Yoshi Chika Otani, Naoki Fukata, Koji Ishibashi, Shunri Oda

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

A huge nonlocal spin valve signal over 700Ω has been observed in silicon-nanowire-based lateral spin valve with permalloy electrodes. The magnitude of the observed huge spin signal was quantitatively explained using the conventional spin diffusion model in a one-dimensionally confined silicon channel. From the temperature dependence of the spin signal, the interface spin polarization was found to be strongly depolarized by raising the temperature. This special characteristic can be reasonably explained by considering an increase in the tunneling of thermally activated electrons through the Schottky barrier with an extremely thin depletion layer.

Original languageEnglish
Article number45001
JournalApplied Physics Express
Volume5
Issue number4
DOIs
Publication statusPublished - 2012 Apr 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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