Temperature effects in reverse-type avalanche photodiodes

Mitsuhiro Sato, Takayuki Yanagida, Akira Yoshikawa, Yoichi Yatsu, Jun Kataoka, Fumio Saito

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

These The present paper shows ionization coefficient ratios, k-values, k1 and keff, of reverse-type Si avalanche photodiode. Both of keff and k1, tend to increase when APDs are cooled down. The results for keff are 0.0023 ± 0.0002 at 20 °C, 0.0027 ± 0.0003 at 0 °C, and 0.0049 ±0.0007 at -20 °C. With the result of k1, temperature dependency of k-values Indicates mean free paths of the carriers for phonon scattering shows different temperature dependency, which is considered to reflect the inner structure of APDs.

Original languageEnglish
Title of host publication2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC
Pages1491-1493
Number of pages3
DOIs
Publication statusPublished - 2007 Dec 1
Event2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC - Honolulu, HI, United States
Duration: 2007 Oct 272007 Nov 3

Publication series

NameIEEE Nuclear Science Symposium Conference Record
Volume2
ISSN (Print)1095-7863

Other

Other2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC
CountryUnited States
CityHonolulu, HI
Period07/10/2707/11/3

ASJC Scopus subject areas

  • Radiation
  • Nuclear and High Energy Physics
  • Radiology Nuclear Medicine and imaging

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