The very initial oxidation of a Si(111)-7 X 7 surface was studied by scanning tunneling microscopy (STM). The bias-dependent STM images of Si(111)-7 X 7 surfaces with oxygen adsorbed at RT, 80 and 5 K were compared by observing them at (RT and 80 K), (80 and 5 K) and 5 K, respectively. An essential influence of the measurement conditions on the STM images was clearly demonstrated. Through the experiment, the B-site state, which was defined as having a brighter site than that of normal adatoms, was found to have two different structures at each adsorption site. The recently identified precursor state was shown to change into the well-distinguished B sites, and its thermal activation was also confirmed.
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2004 Oct 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics