TY - JOUR
T1 - Temperature dependent magnetic anisotropy in (Ga,Mn)As layers
AU - Sawicki, M.
AU - Matsukura, F.
AU - Idziaszek, A.
AU - Dietl, T.
AU - Schott, G. M.
AU - Ruester, C.
AU - Gould, C.
AU - Karczewski, G.
AU - Schmidt, G.
AU - Molenkamp, L. W.
PY - 2004/12
Y1 - 2004/12
N2 - It is demonstrated by SQUID measurements that (Ga,Mn)As films can exhibit perpendicular easy axis at low temperatures, even under compressive strain, provided that the hole concentration is sufficiently low. In such films, the easy axis assumes a standard in-plane orientation when the temperature is raised towards the Curie temperature or the hole concentration is increased by low temperature annealing. These findings are shown to corroborate quantitatively the predictions of the mean-field Zener model for ferromagnetic semiconductors. The in-plane anisotropy is also examined, and possible mechanisms accounting for its character and magnitude are discussed.
AB - It is demonstrated by SQUID measurements that (Ga,Mn)As films can exhibit perpendicular easy axis at low temperatures, even under compressive strain, provided that the hole concentration is sufficiently low. In such films, the easy axis assumes a standard in-plane orientation when the temperature is raised towards the Curie temperature or the hole concentration is increased by low temperature annealing. These findings are shown to corroborate quantitatively the predictions of the mean-field Zener model for ferromagnetic semiconductors. The in-plane anisotropy is also examined, and possible mechanisms accounting for its character and magnitude are discussed.
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U2 - 10.1103/PhysRevB.70.245325
DO - 10.1103/PhysRevB.70.245325
M3 - Article
AN - SCOPUS:20144376590
VL - 70
SP - 1
EP - 6
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 0163-1829
IS - 24
M1 - 245325
ER -