Temperature dependent magnetic anisotropy in (Ga,Mn)As layers

M. Sawicki; F. Matsukura; A. Idziaszek; T. Dietl; G. M. Schott; C. Ruester; C. Gould; G. Karczewski; G. Schmidt; L. W. Molenkamp

doi:10.1103/PhysRevB.70.245325

Temperature dependent magnetic anisotropy in (Ga,Mn)As layers

M. Sawicki, F. Matsukura, A. Idziaszek, T. Dietl, G. M. Schott, C. Ruester, C. Gould, G. Karczewski, G. Schmidt, L. W. Molenkamp

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Contribution to journal › Article › peer-review

146 Citations (Scopus)

Abstract

It is demonstrated by SQUID measurements that (Ga,Mn)As films can exhibit perpendicular easy axis at low temperatures, even under compressive strain, provided that the hole concentration is sufficiently low. In such films, the easy axis assumes a standard in-plane orientation when the temperature is raised towards the Curie temperature or the hole concentration is increased by low temperature annealing. These findings are shown to corroborate quantitatively the predictions of the mean-field Zener model for ferromagnetic semiconductors. The in-plane anisotropy is also examined, and possible mechanisms accounting for its character and magnitude are discussed.

Original language	English
Article number	245325
Pages (from-to)	1-6
Number of pages	6
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	70
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevB.70.245325
Publication status	Published - 2004 Dec

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1103/PhysRevB.70.245325

Fingerprint Dive into the research topics of 'Temperature dependent magnetic anisotropy in (Ga,Mn)As layers'. Together they form a unique fingerprint.

Cite this

Temperature dependent magnetic anisotropy in (Ga,Mn)As layers. / Sawicki, M.; Matsukura, F.; Idziaszek, A.; Dietl, T.; Schott, G. M.; Ruester, C.; Gould, C.; Karczewski, G.; Schmidt, G.; Molenkamp, L. W.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 70, No. 24, 245325, 12.2004, p. 1-6.

Research output: Contribution to journal › Article › peer-review

@article{f12bdd960f4d4c21928efe387145d36e,

title = "Temperature dependent magnetic anisotropy in (Ga,Mn)As layers",

abstract = "It is demonstrated by SQUID measurements that (Ga,Mn)As films can exhibit perpendicular easy axis at low temperatures, even under compressive strain, provided that the hole concentration is sufficiently low. In such films, the easy axis assumes a standard in-plane orientation when the temperature is raised towards the Curie temperature or the hole concentration is increased by low temperature annealing. These findings are shown to corroborate quantitatively the predictions of the mean-field Zener model for ferromagnetic semiconductors. The in-plane anisotropy is also examined, and possible mechanisms accounting for its character and magnitude are discussed.",

author = "M. Sawicki and F. Matsukura and A. Idziaszek and T. Dietl and Schott, {G. M.} and C. Ruester and C. Gould and G. Karczewski and G. Schmidt and Molenkamp, {L. W.}",

year = "2004",

month = dec,

doi = "10.1103/PhysRevB.70.245325",

language = "English",

volume = "70",

pages = "1--6",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "0163-1829",

publisher = "American Institute of Physics Publising LLC",

number = "24",

}

TY - JOUR

T1 - Temperature dependent magnetic anisotropy in (Ga,Mn)As layers

AU - Sawicki, M.

AU - Matsukura, F.

AU - Idziaszek, A.

AU - Dietl, T.

AU - Schott, G. M.

AU - Ruester, C.

AU - Gould, C.

AU - Karczewski, G.

AU - Schmidt, G.

AU - Molenkamp, L. W.

PY - 2004/12

Y1 - 2004/12

N2 - It is demonstrated by SQUID measurements that (Ga,Mn)As films can exhibit perpendicular easy axis at low temperatures, even under compressive strain, provided that the hole concentration is sufficiently low. In such films, the easy axis assumes a standard in-plane orientation when the temperature is raised towards the Curie temperature or the hole concentration is increased by low temperature annealing. These findings are shown to corroborate quantitatively the predictions of the mean-field Zener model for ferromagnetic semiconductors. The in-plane anisotropy is also examined, and possible mechanisms accounting for its character and magnitude are discussed.

AB - It is demonstrated by SQUID measurements that (Ga,Mn)As films can exhibit perpendicular easy axis at low temperatures, even under compressive strain, provided that the hole concentration is sufficiently low. In such films, the easy axis assumes a standard in-plane orientation when the temperature is raised towards the Curie temperature or the hole concentration is increased by low temperature annealing. These findings are shown to corroborate quantitatively the predictions of the mean-field Zener model for ferromagnetic semiconductors. The in-plane anisotropy is also examined, and possible mechanisms accounting for its character and magnitude are discussed.

UR - http://www.scopus.com/inward/record.url?scp=20144376590&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20144376590&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.70.245325

DO - 10.1103/PhysRevB.70.245325

M3 - Article

AN - SCOPUS:20144376590

VL - 70

SP - 1

EP - 6

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

SN - 0163-1829

IS - 24

M1 - 245325

ER -