Temperature-dependent contrasts of lateral p+-n junctions on H/Si(100) imaged with photoemission electron microscopy

Hirokazu Fukidome, Masamichi Yoshimura, Kazuyuki Ueda

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


The temperature dependence of contrasts on a H/Si(100) surface with lateral p+-n junctions has been studied for the first time by photoemission electron microscopy. It is found that the intensity ratio of photoelectrons from the p+-region to that from the n-region varies with temperature. This temperature dependence arises mainly from the change in the band bending of n-region. The change can be qualitatively explained by the balance between the higher pinned position of Fermi level induced by hydrogen-termination and surface photovoltage, followed with the further shift of the pinned Fermi level to intrinsic one at higher temperatures.

Original languageEnglish
Pages (from-to)L1417-L1419
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number46-49
Publication statusPublished - 2005 Nov 25
Externally publishedYes


  • Band bending
  • Hydrogen-termination
  • Photoemission electron microscope
  • Si
  • Surface photovoltage
  • p-n junction

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)


Dive into the research topics of 'Temperature-dependent contrasts of lateral p<sup>+</sup>-n junctions on H/Si(100) imaged with photoemission electron microscopy'. Together they form a unique fingerprint.

Cite this