Abstract
The temperature dependence of contrasts on a H/Si(100) surface with lateral p+-n junctions has been studied for the first time by photoemission electron microscopy. It is found that the intensity ratio of photoelectrons from the p+-region to that from the n-region varies with temperature. This temperature dependence arises mainly from the change in the band bending of n-region. The change can be qualitatively explained by the balance between the higher pinned position of Fermi level induced by hydrogen-termination and surface photovoltage, followed with the further shift of the pinned Fermi level to intrinsic one at higher temperatures.
Original language | English |
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Pages (from-to) | L1417-L1419 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 44 |
Issue number | 46-49 |
DOIs | |
Publication status | Published - 2005 Nov 25 |
Externally published | Yes |
Keywords
- Band bending
- Hydrogen-termination
- Photoemission electron microscope
- Si
- Surface photovoltage
- p-n junction
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)