Temperature-dependent carbon incorporation into the Si 1-y C y film during gas-source molecular beam epitaxy using monomethylsilane

A. Konno, K. Senthil, T. Murata, M. Suemitsu

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


Coverage and adsorption state of hydrogen atoms on the growing surface of Si 1-y C y film using monomethylsilane has been investigated by using temperature-programmed desorption (TPD) and multiple-internal- reflection Fourier-transform infrared spectroscopy (MIR-FT-IR). The surface hydrogen coverage decreases with the growth temperature T g until it disappears at 800 °C. All the H 2 -TPD spectra are well resolved into six SiH-related and one CH n -related hydrogen desorption peaks. The SiH-related FT-IR peak showed a blue shift with increasing T g , which, in conjunction with the TPD, is related to enhanced C incorporation at backbonds of SiH.

Original languageEnglish
Pages (from-to)3692-3696
Number of pages5
JournalApplied Surface Science
Issue number10
Publication statusPublished - 2006 Mar 15


  • Carbon incorporation
  • Monomethylsilane
  • SiC
  • Surface hydrogen
  • TPD

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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