Temperature dependency of driving current in High-κ/Metal gate MOSFET and its influence on CMOS inverter circuit

Takeshi Sasaki, Takuya Imamoto, Tetsuo Endoh

Research output: Contribution to journalArticlepeer-review

Abstract

As the integration density and capacitance of semiconductor devices have increased, high-dielectric (High-k) materials have attracted considerable attention. We investigated the dependence of threshold voltage (Vth) characteristics of the High-κ/Metal Gate MOSFET fabricated with 65 nm CMOS process on the temperature, in comparison to conventional SiON/Poly-Si Gate MOSFET. Two aspects including the Fermi level and the channel mobility in MOSFET are discussed in details. Furthermore, the influence of threshold voltage characteristics of the High-κ/Metal Gate MOSFET on the logic threshold voltage (Vth-inv) of CMOS inverter is reported in this paper.

Original languageEnglish
Pages (from-to)751-759
Number of pages9
JournalIEICE Transactions on Electronics
VolumeE94-C
Issue number5
DOIs
Publication statusPublished - 2011 May

Keywords

  • CMOS
  • High-κ dielectric film
  • High-κ/metal gate stack
  • Inverter
  • Mobility

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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