Temperature dependences of acceptor concentration, conductivity mobility, and resistivity of Ga-doped czochralski-si crystals

Takeshi Hoshikawa, Toshinori Taishi, Keigo Hoshikawa, Ichiro Yonenaga, Satoshi Uda

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The temperature dependences of acceptor concentration nA, conductivity mobility μC, and resistivity ρ of gallium (Ga)-doped Czochralski (CZ)-silicon (Si) crystals were studied in the temperature range from 220 to 360 K (-53 to 87°C). Crystals with Ga concentration Na from 6.1 × 1014 to 2.0 × 1018 atoms/cm3 were analyzed by Hall-effect measurements using the van der Pauw method in the temperature range from 80 to 360 K. The temperature dependences of nA and ρ of crystals with less than 1016 atoms/cm3 showed the same trends as those of B-doped p-type Si crystals, while those of crystals with more than 1016 atoms/cm3 differed from those of B-doped crystals, mainly because the temperature dependence of na is not in the saturation range and the degree of ionization na/Na decreases with decreasing temperature from 360 to 220 K.

Original languageEnglish
Number of pages1
JournalJapanese journal of applied physics
Volume48
Issue number3
DOIs
Publication statusPublished - 2009 Mar 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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