Temperature dependence of up-take and release of H in near surfaces of D+ ion implanted proton conducting oxide ceramics

B. Tsuchiya, K. Morita, S. Nagata, K. Toh, Tatsuo Shikama

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Temperature dependence of up-take and release of H in proton conducting ceramics (Y-doped BaCeO3) implanted with 10 keV D2+ ions at room temperature has been studied by subsequent exposure to water vapor. It is found the concentration of D implanted decreases by exposure of the specimen to Ar gas including H2O vapor of 5.3 ppm, while that of H absorbed in the projected range of the D2+ ions increases and reaches to the initial implantation concentration of D. The D-H exchange rate increases as the temperature is elevated from 295 to 323 K. The enhancement in the D-H exchange rates is ascribed to thermal detrapping of both D and H.

Original languageEnglish
Pages (from-to)541-544
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume257
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - 2007 Apr

Keywords

  • Elastic recoil detection
  • Hydrogen isotopes exchange
  • Ion beam modification
  • Proton conductive material
  • Temperature dependence

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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