Temperature dependence of thermal expansion and elastic constants of single crystals of ZrB2 and the suitability of ZrB2 as a substrate for GaN film

Norihiko L. Okamoto; Misato Kusakari; Katsushi Tanaka; Haruyuki Inui; Masaharu Yamaguchi; Shigeki Otani

doi:10.1063/1.1525404

Temperature dependence of thermal expansion and elastic constants of single crystals of ZrB₂ and the suitability of ZrB₂ as a substrate for GaN film

Norihiko L. Okamoto, Misato Kusakari, Katsushi Tanaka, Haruyuki Inui, Masaharu Yamaguchi, Shigeki Otani

Research output: Contribution to journal › Article › peer-review

116 Citations (Scopus)

Abstract

The coefficients of thermal expansion (CTE) and elastic constants of single crystals of ZrB₂ were discussed. Temperature ranges from room temperature to 1073 K and from room temperature to 1373 K. Results showed a small compressive stress in the GaN thin-films crystal growm on the (0001) surface of the ZnB₂ substrate.

Original language	English
Pages (from-to)	88-93
Number of pages	6
Journal	Journal of Applied Physics
Volume	93
Issue number	1
DOIs	https://doi.org/10.1063/1.1525404
Publication status	Published - 2003 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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Temperature dependence of thermal expansion and elastic constants of single crystals of ZrB₂ and the suitability of ZrB₂ as a substrate for GaN film. / Okamoto, Norihiko L.; Kusakari, Misato; Tanaka, Katsushi; Inui, Haruyuki; Yamaguchi, Masaharu; Otani, Shigeki.

In: Journal of Applied Physics, Vol. 93, No. 1, 01.01.2003, p. 88-93.

Research output: Contribution to journal › Article › peer-review

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AB - The coefficients of thermal expansion (CTE) and elastic constants of single crystals of ZrB2 were discussed. Temperature ranges from room temperature to 1073 K and from room temperature to 1373 K. Results showed a small compressive stress in the GaN thin-films crystal growm on the (0001) surface of the ZnB2 substrate.

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Temperature dependence of thermal expansion and elastic constants of single crystals of ZrB₂ and the suitability of ZrB₂ as a substrate for GaN film

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