Temperature dependence of the spin tunneling magnetoresistive effect on NiFe/Co/Al2O3/Co/NiFe/FeMn junctions

Seiji Kumagai, Nobuki Tezuka, Terunobu Miyazaki

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14 Citations (Scopus)


Spin-valve type spin tunneling junctions using contact metal masks have been fabricated. The annealing effect and temperature dependence of the tunneling magnetoresistance (TMR) ratio and saturated resistance (Rs) have been investigated. As-prepared NiFe/Co/Al2O3/Co/NiFe/FeMn junctions show a spin-valve like MR curve and a TMR ratio of up to 28% at room temperature. The temperature dependence of the TMR ratio and Rs is affected by the annealing. For annealed junction, the TMR ratio slightly decreases with increasing temperature and rapidly decreases around 418 K because of the disappearance of an exchange bias of the FeMn layer.

Original languageEnglish
Pages (from-to)L1498-L1500
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number11 SUPPL. B
Publication statusPublished - 1997 Nov 15


  • Contact metal mask
  • Spin tunneling magnetoresistive effect
  • Spin-valve
  • Temperature dependence
  • Tunneling magnetoresistance ratio

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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