Temperature dependence of switching field distribution in a NiFe wire with a pad

K. Shigeto, K. Miyake, T. Okuno, K. Mibu, T. Ono, Y. Yokoyama, T. Kawagoe, Y. Suzuki, T. Shinjo

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


The distribution of switching fields (Hsw) in a NiFe wire was investigated as a function of temperature between 5 and 300 K. The sample structure under investigation is Ta/NiFe/Cu/NiFe wire (150 nm width) connecting to a square pad (large area) at an end. Magnetization reversal phenomena are very sensitively detected using the giant magnetoresistance effect. With repeating magnetoresistance measurements, we obtained a histogram of Hsw with three narrow peaks at each temperature. The origin of three peaks can be attributed to the existence of three different kinds of magnetic domain structures at the pad area, which was confirmed by magnetic force microscopy observation.

Original languageEnglish
Pages (from-to)301-304
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Issue number1-3
Publication statusPublished - 2002 Feb


  • Domain structure
  • Magnetization reversal
  • Switching fields
  • Thermal activation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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