Temperature dependence of spin-dependent transport properties of Co 2MnSi-based current-perpendicularto-plane magnetoresistive devices

Y. Sakuraba, K. Izumi, S. Bosu, K. Saito, Koki Takanashi

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The origin of magnetoresistance (MR) ratio reduction below ∼80 K in Co2MnSi (CMS)/Ag/Co2MnSi current-perpendicular-to-plane giant magnetoresistive devices was investigated. The temperature dependence of ΔRA was independent of the CMS layer thickness, indicating that the spin-diffusion length in the CMS layers is unimportant for the reduction in the MR ratio at low temperatures. A small 90° interlayer exchange coupling, which originated from inter-diffused Mn impurities in the Ag spacer, was observed only at low temperatures from 5 to ∼ 100 K. A possible origin for the reduction in the MR ratio below ∼80K is the drastic reduction in the spin-diffusion length of the Ag spacer due to magnetic ordering of the Mn impurities.

Original languageEnglish
Article number064009
JournalJournal of Physics D: Applied Physics
Volume44
Issue number6
DOIs
Publication statusPublished - 2011 Feb 16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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